Abstract In this study, we studied the exchange bias (EB) effect in Ni50Mn35In15 and Ni50Mn35In15/BiFeO3 heterostructure thin films deposited onto Pt/Ti/SiO2/Si substrate using dc/rf magnetron sputtering. In pure Ni50Mn35In15 film, the shift of the hysteresis loop from the origin up to 110 Oe was observed at 10 K due to coexistence of FM-AFM interface. On the other hand, the shift of the hysteresis loop was significantly enhanced (480 Oe) in Ni50Mn35In15/BiFeO3 heterostructure thin film at 10 K in field cooled. Further, a high exchange bias field of 80 Oe was found at room temperature in Ni50Mn35In15/BiFeO3 heterostructure thin film. The observed exchange bias field (HE) in this heterostructure thin film was attributed to the presence of a pinned and uncompensated spins in the antiferromagnetic at the interface, and induced by the interface exchange coupling between Ni50Mn35In15 and BiFeO3. This behaviour is an additional property for the Ni50Mn35In15/BiFeO3 heterostructure thin film to be used in various other magnetic memory devise applications.

中文翻译：

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Ni 50 Mn 35 In 15 /BiFeO 3 异质结薄膜中的交换偏置效应

摘要 在本研究中，我们研究了使用直流/射频磁控溅射沉积在 Pt/Ti/SiO2/Si 衬底上的 Ni50Mn35In15 和 Ni50Mn35In15/BiFeO3 异质结构薄膜中的交换偏置 (EB) 效应。在纯 Ni50Mn35In15 薄膜中，由于 FM-AFM 界面的共存，在 10 K 时观察到磁滞回线从原点移动到 110 Oe。另一方面，Ni50Mn35In15/BiFeO3 异质结构薄膜在 10 K 场冷下磁滞回线的偏移显着增强（480 Oe）。此外，在室温下在 Ni50Mn35In15/BiFeO3 异质结构薄膜中发现了 80 Oe 的高交换偏置场。在该异质结构薄膜中观察到的交换偏置场（HE）归因于界面处反铁磁中存在钉扎和未补偿自旋，由 Ni50Mn35In15 和 BiFeO3 之间的界面交换耦合引起。这种行为是 Ni50Mn35In15/BiFeO3 异质结构薄膜的附加特性，可用于各种其他磁存储器设备应用。