Inorganic NiO is a promising hole extracting material for p-i-n planar perovskite solar cells due to its low cost, ultra-high photo and thermal-stability, and high energy level of conduction band blocking photoelectron from perovskite to cathode to prevent charge recombination at the interface. However, the power conversion efficiency (PCE) of NiO-based p-i-n devices is still lower than TiO₂ based n-i-p devices because of relatively low light harvesting ability in the red light region and the low work function of NiO limited the improvement of open circuit voltage. In this study, a novel surface modification method was developed for NiO-based p-i-n planar devices, which enhanced red light harvesting ability and device open voltage. It proved that all three functional groups of surface modifier played key role to boost the device performance. Detailed investigations show an increased interface contact between perovskite and hole transport layer improving charge extraction, preferential orientation of perovskite crystal that insures external quantum efficiency higher than 90% in the whole visible light range and even up to 95% in short wavelength region. The surface treatment improves the short circuit current density from 20 to 23.6 mA cm^-2 and open voltage from 1.06 to 1.12 V.

无机NiO具有低成本，超高的光稳定性和热稳定性以及高能级能阻止光电子从钙钛矿到阴极的导电带，从而阻止界面处的电荷复合，是一种理想的用于针状平面钙钛矿太阳能电池的空穴提取材料。但是，基于NiO的pin器件的功率转换效率（PCE）仍低于TiO ₂由于在红光区域的相对较低的光收集能力以及NiO的低功函限制了开路电压的提高，这种基于NIP的压区设备受到了限制。在这项研究中，为基于NiO的引脚平面器件开发了一种新的表面改性方法，该方法提高了红光收集能力和器件开路电压。事实证明，表面改性剂的所有三个功能组在提高设备性能中起着关键作用。详细的研究表明，钙钛矿和空穴传输层之间的界面接触增加，从而改善了电荷提取，钙钛矿晶体的优先取向确保了在整个可见光范围内的外部量子效率高于90％，在短波长区域甚至高达95％。表面处理将短路电流密度从20提高到23。^-2且开路电压为1.06至1.12 V.