Abstract We report on the production of hybrid graphene/semiconducting polymer films in one step procedure by making use of ultrasound-assisted liquid-phase exfoliation of graphite powder in the presence of π-conjugated polymers, i.e. poly(3-hexylthiophene) (P3HT) or poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3,4-c]pyridine] (PCDTPT). The polymers were chosen in view of their different propensity to form crystalline structures, their decoration with alkyl chains that are known to possess high affinity for the basal plane of graphene, the energy levels of their frontier orbitals which are extremely similar to the work function of graphene, and their high electrical performance when integrated in field-effect transistors (FETs). The polymers act as a dispersion-stabilizing agent and prevent the re-aggregation of the exfoliated graphene flakes, ultimately enabling the production of homogeneous bi-component dispersions. The electrical characterization of few-layer graphene/PCDTPT hybrids, when integrated as active layer in bottom-contact bottom-gate FETs, revealed an increase of the field-effect mobility compared to the π-conjugated-based pristine devices, a result which can be attributed to the joint effect of the few-layer graphene sheets and semiconducting polymers improving the charge-transport in the channel of the field-effect transistor. In particular, few-layer graphene/PCDTPT films displayed a 30-fold increase of PCDTPT's mobility if compared to pristine polymer samples. Such findings represent a step forward towards the optimization of graphene exfoliation and processing into electronic devices, as well as towards improved electrical performance in organic-based field-effect transistors.

中文翻译：

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在半导体聚合物存在下进行石墨烯剥离，以提高薄膜的均匀性和电性能

摘要 我们报告了在 π 共轭聚合物，即聚（3-己基噻吩）（P3HT）存在下，利用超声辅助液相剥离石墨粉，一步法生产混合石墨烯/半导体聚合物薄膜。或poly[4-(4,4-dihexadecyl-4H-cyclopenta[1,2-b:5,4-b']dithiophen-2-yl)-alt-[1,2,5]thiadiazolo-[3, 4-c]吡啶] (PCDTPT)。选择这些聚合物是考虑到它们形成晶体结构的不同倾向，它们用已知对石墨烯基面具有高亲和力的烷基链装饰，它们的前沿轨道的能级与石墨烯，以及它们集成在场效应晶体管 (FET) 中时的高电性能。聚合物充当分散稳定剂并防止剥离的石墨烯薄片重新聚集，最终能够生产均匀的双组分分散体。将几层石墨​​烯/PCDTPT 杂化物作为有源层集成到底部接触底栅 FET 中时，其电学特性表明，与基于 π 共轭的原始器件相比，场效应迁移率增加，结果可以归因于少层石墨烯片和半导体聚合物的共同作用，改善了场效应晶体管沟道中的电荷传输。特别是，与原始聚合物样品相比，少层石墨烯/PCDTPT 薄膜的 PCDTPT 迁移率增加了 30 倍。