The development of inversion domain networks consisting of basal‐plane and pyramidal‐plane inversion domain boundary (b‐IDB and p‐IDB) interfaces within grains in Sn‐Al dual‐doped ZnO (Zn_0.98Sn_0.01Al_0.01O) polycrystalline ceramics has been confirmed using transmission electron microscopy. The atomic structure of the b‐IDB and p‐IDB interfaces has been analyzed using atomic‐resolution scanning transmission electron microscopy. The localization of Sn and Al at the respective sites of the b‐IDBs and p‐IDBs was confirmed by energy‐dispersive X‐ray spectroscopy. In contrast to Sn or Al single‐dopant addition to ZnO, which results in the formation of spinel phase precipitates without the development of inversion domain networks, Sn‐Al dual‐doping caused the suppression of spinel phase formation and the formation of monophasic inversion domain networks composed of RMO₃(ZnO)_n homologous phase compound members, where R and M represent dopants substituting at the b‐IDB and p‐IDB sites, with a general formula of SnAlO₃(ZnO)_n. The results of this study demonstrate that the formation of inversion domain networks in ZnO‐based ceramics can be stabilized via multiple‐dopant addition. This finding has potential implications for the modification of the bulk or nanoscale properties based on the choice of the specific dopants, R and M, the control of the ratio R:M and the value of n in the RMO₃(ZnO)_n homologous phase compound members constituting the inversion domain networks.

中文翻译：

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ZnO中的反转域网络稳定和尖晶石相抑制

Sn-Al双掺杂ZnO（Zn _0.98 Sn _0.01 Al _0.01）晶粒内由基面和棱锥面反转域边界（b-IDB和p-IDB）界面组成的反转域网络的发展O）多晶陶瓷已经使用透射电子显微镜确认。使用原子分辨率扫描透射电子显微镜分析了b-IDB和p-IDB接口的原子结构。通过能量色散X射线光谱证实了Sn和Al在b-IDB和p-IDB各自位置的定位。与ZnO中的Sn或Al单掺杂物导致形成尖晶石相沉淀而没有形成反型畴网络相反，Sn‐Al双掺杂导致抑制了尖晶石相的形成和单相反型畴的形成由RM O ₃（ZnO）_n同源相化合物组成的网络，其中R和M代表在b-IDB和p-IDB位置处取代的掺杂物，其通式为SnAlO ₃（ZnO）_n。这项研究的结果表明，可以通过多掺杂添加来稳定基于ZnO的陶瓷中反型畴网络的形成。这一发现具有用于散装或纳米级性质的基于特定的掺杂剂，的选择的变形例的潜在影响- [R和中号，所述比的控制- [R ：中号和的值Ñ在RM ø ₃（ZnO）的_Ñ同源相化合物组成反演域网络。