Abstract In this paper, Te-doped multifilled n-type skutterudite compounds were prepared by high pressure and high temperature (HPHT) method and characterized by X-ray and SEM, which showed that InxBa0.2-xCo4Sb11.5Te0.5 samples with fine grain size can be prepared by HPHT rapidly. Both thermal transport properties and electrical transport properties have been characterized in the temperature range of 363–765 K. The combination of (In, Ba) double-filled and Te-doped is more effective than simple Te-doped or the combination of In-filled and Te-doped in reducing lattice thermal conductivity. Finally, the figure of merit value (ZT) of In0.15Ba0.05Co4Sb11.5Te0.5 reached 1.11 at 765 K. This showed that the ZT values of samples can likely be improved through combining multiple filling atoms and doping atoms to broaden the range of resonant phonon scattering.

中文翻译：

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通过高压技术增强 Te 掺杂和 In, Ba 双填充 CoSb 3 复合材料的热电性能

摘要 本文采用高压高温 (HPHT) 法制备了掺 Te 的多填充 n 型方钴矿化合物，并通过 X 射线和 SEM 对其进行了表征，结果表明 InxBa0.2-xCo4Sb11.5Te0.5 样品具有细高温高压可快速制备晶粒尺寸。热传输特性和电传输特性均在 363-765 K 的温度范围内进行表征。 (In, Ba) 双填充和 Te 掺杂的组合比简单的 Te 掺杂或 In-掺杂的组合更有效。填充和掺杂 Te 以降低晶格热导率。最后，In0.15Ba0.05Co4Sb11.5Te0.5 的品质因数 (ZT) 在 765 K 时达到 1.11。