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P‐GaSe/N‐MoS2 Vertical Heterostructures Synthesized by van der Waals Epitaxy for Photoresponse Modulation
Small ( IF 13.0 ) Pub Date : 2018-01-10 , DOI: 10.1002/smll.201702731 Nan Zhou 1 , Renyan Wang 1 , Xing Zhou 1 , Hongyue Song 2 , Xing Xiong 1 , Yao Ding 3 , Jingtao Lü 2 , Lin Gan 1 , Tianyou Zhai 1
Small ( IF 13.0 ) Pub Date : 2018-01-10 , DOI: 10.1002/smll.201702731 Nan Zhou 1 , Renyan Wang 1 , Xing Zhou 1 , Hongyue Song 2 , Xing Xiong 1 , Yao Ding 3 , Jingtao Lü 2 , Lin Gan 1 , Tianyou Zhai 1
Affiliation
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The important role of p–n junction in modulation of the optoelectronic properties of semiconductors is widely cognized. In this work, for the first time the synthesis of p‐GaSe/n‐MoS2 heterostructures via van der Waals expitaxial growth is reported, although a considerable lattice mismatching of ≈18% exists. According to the simulation, a significant type II p–n junction barrier located at the interface is expected to be formed, which can modulate optoelectronic properties of MoS2 effectively. It is intriguing to reveal that the presence of GaSe can result in obvious Raman and photoluminescence (PL) shift of MoS2 compared to that of pristine one, more interestingly, for PL peak shift, the effect of GaSe‐induced tensile strain on MoS2 has overcome the p‐doping effect of GaSe, evidencing the strong interlayer coupling between GaSe and MoS2. As a result, the photoresponse rate of heterostructures is improved by almost three orders of magnitude compared with that of pristine MoS2.
中文翻译：
范德华外延合成的P-GaSe / N-MoS2垂直异质结构用于光响应调制
人们普遍认识到PN结在调制半导体光电特性中的重要作用。在这项工作中，首次报道了通过范德华斯外延生长合成p-GaSe / n-MoS 2异质结构的方法，尽管存在约18％的晶格失配。根据模拟，预计将在界面处形成一个显着的II型p–n结势垒，它可以有效地调节MoS 2的光电性能。令人感兴趣的是，与原始的GaS相比，GaSe的存在可导致MoS 2的明显拉曼和光致发光（PL）位移，更有趣的是，对于PL峰位移，GaSe诱导的拉伸应变对MoS 2的影响克服了GaSe的p掺杂效应，证明了GaSe和MoS 2之间的牢固的层间耦合。结果，与原始MoS 2相比，异质结构的光响应率提高了近三个数量级。
更新日期：2018-01-10
中文翻译：
范德华外延合成的P-GaSe / N-MoS2垂直异质结构用于光响应调制
人们普遍认识到PN结在调制半导体光电特性中的重要作用。在这项工作中，首次报道了通过范德华斯外延生长合成p-GaSe / n-MoS 2异质结构的方法，尽管存在约18％的晶格失配。根据模拟，预计将在界面处形成一个显着的II型p–n结势垒，它可以有效地调节MoS 2的光电性能。令人感兴趣的是，与原始的GaS相比，GaSe的存在可导致MoS 2的明显拉曼和光致发光（PL）位移，更有趣的是，对于PL峰位移，GaSe诱导的拉伸应变对MoS 2的影响克服了GaSe的p掺杂效应，证明了GaSe和MoS 2之间的牢固的层间耦合。结果，与原始MoS 2相比，异质结构的光响应率提高了近三个数量级。
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