Magnetic‐Induced‐Piezopotential Gated MoS2 Field‐Effect Transistor at Room Temperature,Advanced Materials

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Magnetic‐Induced‐Piezopotential Gated MoS2 Field‐Effect Transistor at Room Temperature
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-10 , DOI: 10.1002/adma.201704524
Yudong Liu _{1,

2,

3} , Junmeng Guo _{1,

2,

3} , Aifang Yu _{1,

2} , Yang Zhang _{1,

2} , Jinzong Kou _{1,

2,

3} , Ke Zhang _{1,

2,

3} , Rongmei Wen _{1,

2,

3} , Yan Zhang _{1,

2,

4} , Junyi Zhai _{1,

2} , Zhong Lin Wang _{1,

2,

5}

Affiliation

Utilizing magnetic field directly modulating/turning the charge carrier transport behavior of field‐effect transistor (FET) at ambient conditions is an enormous challenge in the field of micro–nanoelectronics. Here, a new type of magnetic‐induced‐piezopotential gated field‐effect‐transistor (MIPG‐FET) base on laminate composites is proposed, which consists of Terfenol‐D, a ferroelectric single crystal (PMNPT), and MoS₂ flake. When applying an external magnetic field to the MIPG‐FET, the piezopotential of PMNPT triggered by magnetostriction of the Terfenol‐D can serve as the gate voltage to effectively modulate/control the carrier transport process and the corresponding drain current at room temperature. Considering the two polarization states of PMNPT, the drain current is diminished from 9.56 to 2.9 µA in the P_up state under a magnetic field of 33 mT, and increases from 1.41 to 4.93 µA in the P_down state under a magnetic field of 42 mT and at a drain voltage of 3 V. The current on/off ratios in these states are 330% and 432%, respectively. This work provides a novel noncontact coupling method among magnetism, piezoelectricity, and semiconductor properties, which may have extremely important applications in magnetic sensors, memory and logic devices, micro‐electromechanical systems, and human–machine interfacing.

中文翻译：

室温下磁感应压电门控MoS2场效应晶体管

在环境条件下，利用磁场直接调制/改变场效应晶体管（FET）的电荷载流子传输行为是微纳米电子学领域的巨大挑战。在此，基于叠层复合材料，提出了一种新型的磁致压电门控场效应晶体管（MIPG-FET），该晶体管由Terfenol-D，铁电单晶（PMNPT）和MoS _2组成。薄片。当向MIPG-FET施加外部磁场时，由Terfenol-D的磁致伸缩触发的PMNPT的压电势能用作栅极电压，以在室温下有效调制/控制载流子传输过程和相应的漏极电流。考虑PMNPT的两个偏振态中，漏极电流从9.56减少到2.9μA在P_最多33 1mT的磁场下的状态，并增加从1.41到4.93μA在P_向下处于42 mT的磁场和3 V的漏极电压下的电流状态。在这些状态下，电流开/关比分别为330％和432％。这项工作提供了一种新颖的磁，压电和半导体特性之间的非接触耦合方法，这可能在磁传感器，存储器和逻辑设备，微机电系统以及人机界面中具有极其重要的应用。

更新日期：2018-01-10

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