Abstract The ceramic thin films of 47(Ba0.7Ca0.3)TiO3–0.53Ba(Zr0.2Ti0.8)O3 (BCZT) + x (x = 0.2, 0.3, 0.4 and 0.5) mol% Tb were grown on Pt(111)/Si substrates with various annealing temperature by pulsed laser deposition. The XRD spectra confirm that Tb element can enhance the (l10) and (111) orientations in ceramic films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) images show that Tb-doping can increase particle size effectively. The surface of Tb-doped film annealed at 800 ℃ is uniform and crack-free, and the average particle size and mean square roughness (RMS) are about 280 nm and 4.4 nm, respectively. Comparing with pure BCZT, the residual polarization (Pr) of 0.4 mol% Tb-doped film annealed at 800 ℃ increase from 3.6 to 9.8 μC/cm2. Moreover, the leakage current density value of Tb doped films are one order of magnitude (5.33 × 10−9−1.97 × 10−8 A/cm2 under 100 kV/cm) smaller than those of pure BCZT films (1.02 × 10−7 A/cm2).

中文翻译：

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脉冲激光沉积不同退火温度下Tb掺杂对47(Ba 0.7 Ca 0.3 )TiO 3 –0.53Ba(Zr 0.2 Ti 0.8 )O 3 薄膜结构和电学性能的影响

摘要 47(Ba0.7Ca0.3)TiO3–0.53Ba(Zr0.2Ti0.8)O3 (BCZT) + x (x = 0.2, 0.3, 0.4 and 0.5) mol% Tb 陶瓷薄膜生长在 Pt( 111)/Si 衬底通过脉冲激光沉积具有不同的退火温度。XRD 谱证实Tb 元素可以增强陶瓷薄膜中的(l10) 和(111) 取向。扫描电子显微镜 (SEM) 和原子力显微镜 (AFM) 图像表明，Tb 掺杂可以有效地增加粒径。800℃退火的Tb掺杂薄膜表面均匀无裂纹，平均粒径和均方粗糙度（RMS）分别约为280 nm和4.4 nm。与纯BCZT相比，800 ℃退火的0.4 mol％Tb掺杂薄膜的残余极化（Pr）从3.6增加到9.8 μC/cm2。而且，