Abstract An inability to precisely control doping has hindered the development of electrically reliable and predictable low-dimensional devices. Here, we demonstrated a modulation of electronic bands of one-dimensional carbon nanotubes (CNTs) over a wide range by using metal electrodes having almost the same work function as the CNT in a dual-gate mode. Gate-response curves obtained from Ti versus In metal-contacted devices showed opposite behaviors in shape and magnitude in an ambipolar state, which was shown to be due to the difference between the pinned positions of their Fermi levels in the band gap of the CNT with different work functions of the metals. By varying the gate-bias voltages of the dual gates, we successfully demonstrated that the electronic band profile of the CNT can be modulated precisely and over a wide range to higher and lower energy levels, resulting in the ability to have it form p-metal, p-type semiconductor, ambipolar, n-type semiconductor, and n-metallic electronic states.

中文翻译：

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通过功函数工程对碳纳米管场效应晶体管进行带调制和原位掺杂控制

摘要 无法精确控制掺杂阻碍了电可靠和可预测的低维器件的发展。在这里，我们通过在双栅极模式下使用具有与 CNT 几乎相同的功函数的金属电极，演示了在宽范围内对一维碳纳米管 (CNT) 的电子能带进行调制。从 Ti 与 In 金属接触器件获得的栅极响应曲线在双极状态下表现出相反的形状和幅度行为，这表明这是由于 CNT 带隙中费米能级的钉扎位置与金属的不同功函数。通过改变双栅极的栅极偏置电压，