In many cases of organic electronic devices, spin manipulation adopts galvinoxyl spin 1/2 radicals to achieve singlet-triplet transition for a change of spin ensembles. We report scavenging of galvinoxyl spin 1/2 radicals, both in liquid-galvinoxyl samples and in thermal processing of galvinoxyl-doped organic films, as determined by electron spin resonance and UV–Vis measurements. The two different mechanisms of galvinoxyl scavenging are very crucial in organic device processing that often encounters oxidation and high-temperature treatment (∼150 °C), in which situation most of the galvinoxyl frameworks cannot survive.

中文翻译：

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在有机自旋电子学的过程中清除Galvinoxyl自旋1/2自由基

在许多有机电子设备中，自旋操纵采用加尔维诺尔自旋1/2基团来实现单重态-三重态跃迁，从而改变自旋集合体。我们通过电子自旋共振和UV-Vis测量确定，在液体-加尔维诺尔样品中以及在加尔维诺尔掺杂的有机膜的热处理中，都清除了加尔维诺尔自旋1/2基团。在有机器件加工中，经常遇到氧化和高温处理（约150°C），两种不同的加尔维诺尔清除机理非常关键，在这种情况下，大多数加尔维诺尔骨架无法幸存。