The performance of planar perovskite solar cells (PSCs) is quite dependent on the interfacial conditions and then the interfacial band engineering is very important not only for the effective improvement of power conversion efficiency (PCE) but also for the better understanding of the charge transfer in the cells. In this report, the band engineering of the ZnO based electron transport layer (ETL) in PSCs was studied by modulating Sn‐doping level (0 ≤ x ≤ 0.2). A V‐like variation of work function (W_f) as function of Sn‐doping level in Zn_1‐xSn_xO_1+x films was realized from 4.23 to 4.39 eV. As a result, the photovoltaic performance of PSCs with the Zn_1‐xSn_xO_1+x ETLs was adjusted and the V‐like tendencies of photovoltaic parameters of devices, such as open‐circuit voltage (V_OC) and the short‐circuit current (J_SC), were found. The maximum values of V_OC and J_SC were achieved as 1.04 V and 20.68 mA cm⁻² with an ETL of Zn_1‐xSn_xO_1+x, respectively, which corresponds to a highest PCE of 14.12% for ZnO‐based pervoskite solar cells with a large fill factor of 65.62.

中文翻译：

---

通过钙掺杂钙钛矿型太阳能电池的氧化锌电子传输材料进行能带工程

平面钙钛矿太阳能电池（PSC）的性能完全取决于界面条件，因此界面能带工程不仅对于有效提高功率转换效率（PCE）十分重要，而且对于更好地了解硅中的电荷转移也非常重要。细胞。在该报告中，在省电类别的ZnO类电子传输层（ETL）的带工程被调制的Sn-掺杂水平（0≤研究X ≤0.2）。Zn _{1‐ x} Sn _x O _{1+ x中}随Sn掺杂水平变化的功函数（W _f）的V样变化胶片的实现电压范围为4.23至4.39 eV。结果，调整了具有Zn _{1‐ x} Sn _x O _{1+ x} ETL的PSC的光伏性能，以及器件光伏参数的V形趋势，例如开路电压（V _OC）和短路电压。找到电路电流（J _SC）。ETL为Zn _{1- x} Sn _x O _{1+ x时}，V _OC和J _SC的最大值分别为1.04 V和20.68 mA cm ^-2分别对应于以65.62的大填充系数填充的基于ZnO的钙钛矿型太阳能电池的最高PCE为14.12％。