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“Metamagnetoelectric” effect in multiferroics
Journal of Magnetism and Magnetic Materials ( IF 2.5 ) Pub Date : 2018-05-01 , DOI: 10.1016/j.jmmm.2017.12.104
G.C. Fouokeng , F. Kuate Fodouop , M. Tchoffo , L.C. Fai , N. Randrianantoandro

Abstract We present a theoretical calculation of magnetoelectric properties in a quasi-two dimensional spin chain externally controlled by a static electric field in y-direction and magnetic field in z-direction. Given the diversity of properties in functional materials and their applications in physics, the multiferroic model is investigated. By using the Fermi–Dirac statistics of quantum gases and the Landau theory, we assess the effects of the Dzyaloshinskii-Moriya interaction and the electric polarization on the magnetoelectric coupling that induces at low temperature the “metamagnetoelectric” effet, and likewise affects the ferroelectricity induced through symmetry mechanisms and magnetic properties of the multiferroic system. In fact, the variation of the induced polarisation due to spin arrangement through the Dzyaloshinskii-Moriya interaction gives rise to a multistep interdependent metamagnetic and metaelectric transitions which are settled up by the corresponding Dzyaloshinskii-Moriya parameter and the system then exhibits a spin gap that results from an electric and a magnetic demagnetization field range. This metamagnetoelectric effect observed in these multiferroic materials model is seem to be highly tunable via the external electric and magnetic fields and thus can be crucial in the design of new mechanisms for the processing and storage of data and other spintronic applications.

中文翻译:

多铁性中的“超磁电”效应

摘要 我们提出了一个准二维自旋链中磁电特性的理论计算,该链由 y 方向的静态电场和 z 方向的磁场外部控制。鉴于功能材料性质的多样性及其在物理学中的应用,研究了多铁性模型。通过使用量子气体的费米-狄拉克统计和朗道理论,我们评估了 Dzyaloshinskii-Moriya 相互作用和电极化对磁电耦合的影响,该磁电耦合在低温下诱导“超磁电”效应,同样影响铁电诱导通过多铁系统的对称机制和磁性。实际上,由于自旋排列通过 Dzyaloshinskii-Moriya 相互作用引起的诱导极化的变化引起了多步相互依赖的变磁和超电跃迁,这些跃迁由相应的 Dzyaloshinskii-Moriya 参数确定,然后系统表现出由电产生的自旋间隙和磁退磁场范围。在这些多铁性材料模型中观察到的这种超磁电效应似乎可以通过外部电场和磁场高度可调,因此对于设计用于处理和存储数据以及其他自旋电子应用的新机制至关重要。
更新日期:2018-05-01
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