The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b‐axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li‐ion batteries, and other emerging fields are also discussed.

中文翻译：

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硒化锡 (SnSe)：生长、特性和应用

间接带隙半导体硒化锡（SnSe）一直是热电领域的研究热点，因为据报道， SnSe 单晶在 923 K 时沿b轴的ZT（品质因数）值为 2.6 。SnSe 因其出色的光电性能、无毒性、廉价的原材料和相对丰富的优势，在光伏 (PV) 应用中也得到了广泛的研究。此外，SnSe的热电和光电性质可以通过结构转变和适当的掺杂来调节。本文综述了硒化锡研究从其演变至今的研究进展。讨论了 SnSe 研究的生长、表征和最新进展。详细讨论了用于制备 SnSe 材料的最流行的生长技术及其最新进展。讨论了 SnSe 生长中的重要现象以及未来研究中存在的问题。还讨论了硒化锡在光伏领域、锂离子电池和其他新兴领域的应用。