Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO3,Advanced Electronic Materials

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Nonvolatile Electric‐Optical Memory Controlled by Conductive Filaments in Ti‐Doped BiFeO3
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-08 , DOI: 10.1002/aelm.201700551
Zengxing Lu ₁ , Xiaodong Yang ₁ , Chen Jin ₁ , Peilian Li ₂ , Jian-guo Wan ₁ , Jun-ming Liu _{1,

2}

Affiliation

In ferroelectric films, the resistance switching (RS) and ferroelectric photovoltaic effects are ideal for developing next‐generation electronic devices, especially memory devices. In this work, a feasible electric‐optical memory prototype based on both effects is proposed, which can operate with electric writing and optical reading, and realized in Ti‐doped BiFeO₃ films. The RS behavior and the photovoltaic effect at different stage of RS are measured carefully. The results show that the films exhibit filament‐type RS effect. Furthermore, the photovoltaic open‐circuit voltage is demonstrated to be well controlled by switching the resistance state, and such a manipulation can be repeated reliably. By carrying out first‐principles calculations, the working mechanism of the devices is further analyzed, which reveals that the doping of Ti plays a crucial role in the occurrence of the filament‐type RS effect and the improvement of photovoltaic effect. This work provides a feasible avenue to develop high‐performance and low‐power‐consumption memory devices.

中文翻译：

钛掺杂BiFeO3中的导电丝控制的非易失性电光存储器

在铁电薄膜中，电阻开关（RS）和铁电光伏效应是开发下一代电子设备（尤其是存储设备）的理想选择。在这项工作中，提出了一种基于两种效应的可行的电光存储器原型，该原型可以同时进行电写入和光学读取，并在掺Ti的BiFeO _3中实现电影。仔细测量RS行为和RS不同阶段的光电效应。结果表明，这些膜表现出丝状的RS效应。此外，通过切换电阻状态可以很好地控制光伏开路电压，并且可以可靠地重复这种操作。通过进行第一性原理计算，进一步分析了器件的工作机理，结果表明，Ti的掺杂在灯丝型RS效应的发生和光伏效应的改善中起着至关重要的作用。这项工作为开发高性能和低功耗存储设备提供了可行的途径。

更新日期：2018-01-08

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