Graphene‐Based Heterostructured Arrays with Tunable Bandgap: A General and Forsaken Strategy,Advanced Materials Interfaces

当前位置： X-MOL 学术 › Adv. Mater. Interfaces › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Graphene‐Based Heterostructured Arrays with Tunable Bandgap: A General and Forsaken Strategy
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-01-08 , DOI: 10.1002/admi.201701304
Fei Huang _{1,

2} , Zhen Li _{1,

2} , Aihua Yan ₁ , Hui Zhao ₂ , Hao Feng ₂ , Miao Hu ₂ , Qi Li ₂

Affiliation

The pristine graphene is being subjected to zero bandgap and low charge carrier density in nanoelectronic and optoelectronic fields. Designing a versatile platform, constructing perfect interface, and understanding the interface physics in graphene‐based hybrids or heterostructures have therefore been one of the most effective paths for applications in foreseeable future. Unfortunately, inhomogeneous chemical composition and weak interface exert unfavorable effects on such systems because graphene tends to irreversibly restack and subside in solutions. Here, a general method for the preparation of Nb₃O₇F array/graphene (NOFA/G) heterostructures is demonstrated utilizing defect‐chemical technique, homogeneous nucleation, and preferential growth. As a distinguishing method, the solution process is an important scalable approach through oxyfluorinated functionalization on the basal plane of graphene. In particular, constructing NOF arrays on graphene platform markedly enhances light‐harvesting capacity. Moreover, the adsorption edge and bandgap can be effectively tuned according to the degree of oxyfluorinated functionalization. This general strategy extends the preparation of oxyfluoride array/carbon heterostructures and may open a door to other carbon‐based heterostructure, such as oxychloride array/carbon heterostructures, oxysulfide array/carbon heterostructures, etc.

中文翻译：

具有可调带隙的基于石墨烯的异质结构阵列：一种通用且被遗弃的策略

在纳米电子和光电子领域，原始石墨烯正处于零带隙和低载流子密度的状态。因此，在可预见的将来，设计通用的平台，构建完美的界面并了解基于石墨烯的混合或异质结构中的界面物理原理已成为最有效的方法之一。不幸的是，不均匀的化学组成和薄弱的界面对此类系统产生不利的影响，因为石墨烯倾向于不可逆地重新堆积并在溶液中沉降。在这里，是制备Nb ₃ O ₇的一般方法F阵列/石墨烯（NOFA / G）异质结构利用缺陷化学技术，均匀成核和优先生长得到证明。作为一种区分方法，固溶过程是一种重要的可扩展方法，它是通过在石墨烯基面上进行氧氟化官能化来实现的。特别是，在石墨烯平台上构建NOF阵列可显着增强光收集能力。而且，可以根据氧氟化官能化的程度有效地调节吸附边缘和带隙。该通用策略扩展了氟氧化物阵列/碳异质结构的制备，并可能为其他基于碳的异质结构打开一扇门，例如氯氧化物阵列/碳异质结构，硫氧化物阵列/碳异质结构等。

更新日期：2018-01-08

点击分享查看原文

点击收藏

阅读更多本刊最新论文本刊介绍/投稿指南11