Abstract Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite-type single crystal with a diameter of 1 in. was grown by Czochralski (Cz) method. Obtained crystal had good crystallinity and its lattice constants exceeded those of Ca3TaGa3Si2O14 (CTGS) according to the X-ray analysis. A crack-free specimen cut from the grown crystal was used for the measurements of dielectric constant e11T/e0, electromechanical coupling factor k12, and piezoelectric constant d11. The accuracies of these measurements were better than those for the crystal grown by micro-pulling-down (μ-PD) method. Substitution of Ga with Sc resulted modification of these constants in the directions opposite to those observed after partial substitution of Ga (of CTGS) with Al. This suggests that increase of |d14| was most probably associated with enlargement of average size of the Ga sites. The crystal reported here had greater dimensions as compared to analogous crystals grown by the μ-PD method. As a result, accuracy of determination of acoustic constants of this material may be improved.

中文翻译：

---

Ca 3 Ta(Ga 0.9 Sc 0.1 ) 3 Si 2 O 14 块状单晶的晶体生长和压电性能

摘要 采用直拉法(Czochralski, Cz)法生长了直径为1 in.的Ca3Ta(Ga0.9Sc0.1)3Si2O14 langasite型单晶。根据X射线分析，获得的晶体具有良好的结晶度，其晶格常数超过了Ca3TaGa3Si2O14（CTGS）的晶格常数。从生长的晶体上切下的无裂纹样品用于测量介电常数 e11T/e0、机电耦合因子 k12 和压电常数 d11。这些测量的准确性优于通过微下拉（μ-PD）方法生长的晶体。用 Sc 替代 Ga 导致这些常数在与用 Al 部分替代 Ga（CTGS）后观察到的那些相反的方向上的修改。这表明|d14| 的增加 最有可能与 Ga 位点平均尺寸的扩大有关。与通过 μ-PD 方法生长的类似晶体相比，这里报告的晶体具有更大的尺寸。结果，可以提高确定该材料的声学常数的准确性。