We have demonstrated an improvement in device performance of fluorescent organic light-emitting diodes (OLEDs) by inserting a dual anode buffer layer composed of tungsten oxide (WO₃) and molybdenum oxide (MoO₃). The advantage of adding dual anode buffer layers with different deposition sequences over individual and composite oxide buffer layers has been systematically analyzed based on their electronic and optical properties. The incorporation of single and composite buffer layers has been revealed to induce a very low injection barrier for holes in tri-layer fluorescent OLEDs which results in a charge imbalance in the emission layer. In contrast, a proper sequence of buffer layers (WO₃/MoO₃) exhibiting higher contact angle (lower surface energy) and higher surface roughness, together with a step-wise increment of potential barrier leads to a better overall charge balance in the active emission layer. Therefore, an enhanced current efficiency and power efficiency of ∼5.8 cd/A and ∼5.2 lm/W respectively were recorded for the WO₃/MoO₃ buffer unit, which was better than the insertion of individual and composite layers.

我们已经证明，通过插入由氧化钨（WO ₃）和氧化钼（MoO ₃）组成的双阳极缓冲层，可以改善荧光有机发光二极管（OLED）的器件性能。基于其电子和光学特性，已经系统地分析了在单个和复合氧化物缓冲层上添加具有不同沉积顺序的双阳极缓冲层的优势。已经揭示了结合单层缓冲层和复合层缓冲层对于三层荧光OLED中的空穴引起非常低的注入势垒，这导致发射层中的电荷失衡。相反，适当的缓冲层顺序（WO ₃ / MoO ₃）具有更高的接触角（更低的表面能）和更高的表面粗糙度，以及势垒的逐步增加，导致了有源发射层中更好的总体电荷平衡。因此，对于WO ₃ / MoO ₃缓冲单元，记录到的电流效率和功率效率分别提高了约5.8 cd / A和5.2 lm / W ，这比插入单个和复合层要好。