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Improved Transistor Performance of Isoindigo-Based Conjugated Polymers by Chemically Blending Strongly Electron-Deficient Units with Low Content To Optimize Crystal Structure
Macromolecules ( IF 5.1 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1021/acs.macromol.7b02309 Yu Liu 1 , Feifei Wang 1 , Junhui Chen 1 , Xianghua Wang 1 , Hongbo Lu 1 , Longzhen Qiu 1 , Guobing Zhang 1
Macromolecules ( IF 5.1 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1021/acs.macromol.7b02309 Yu Liu 1 , Feifei Wang 1 , Junhui Chen 1 , Xianghua Wang 1 , Hongbo Lu 1 , Longzhen Qiu 1 , Guobing Zhang 1
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Conjugated polymers have received tremendous attention because of their potential application in flexible electronic devices. In addition to synthesizing new conjugated polymers, different methods have been used to improve charge carrier transport. The simple random polymer strategy was used to enhance the charge carrier mobility of isoindigo (ID)-based conjugated polymers by chemically blending a small amount of strongly electron-deficient bis(2-oxoindolin-3-ylidene)benzodifurandione (BIBDF) units. In comparison with a parent polymer (P0) without BIBDF in its polymer backbone, the hole mobilities of random polymers were remarkably enhanced by the chemical blending of BIBDF with low content (<5 mol %). The polymer with 3.75 mol % BIBDF exhibited the highest mobility, 2.17 cm2 V–1 s–1 with a high Ion/Ioff ratio over 106, which was 3 times higher than that of the organic field effect transistors (OFETs) fabricated from the reference D–A polymer P0. The thin films of very polymer were characterized by grazing incidence X-ray diffraction (GIXD) and atomic force microscopy (AFM). The results reveal that the remarkable enhancement of charge mobility upon chemical blending of BIBDF was due to the improvement in crystal structure by the presence of the BIBDF unit, promoting a more ordered lamellar packing and facilitating a small π–π stacking.
中文翻译：
通过化学混合低含量的强电子缺乏单元优化晶体结构，改善了基于靛蓝的共轭聚合物的晶体管性能
共轭聚合物由于其在柔性电子设备中的潜在应用而受到了极大的关注。除了合成新的共轭聚合物以外，还使用了不同的方法来改善电荷载流子的传输。通过化学掺混少量强电子缺陷的双（2-氧代吲哚-3-亚基）苯并二呋喃二酮（BIBDF）单元，使用简单的随机聚合物策略来增强基于靛蓝（ID）的共轭聚合物的电荷载流子迁移率。与在其聚合物主链中没有BIBDF的母体聚合物（P0）相比，通过低含量（＜5mol％）的BIBDF的化学共混显着提高了无规聚合物的空穴迁移率。具有3.75 mol％BIBDF的聚合物表现出最高的迁移率，即2.17 cm 2 V–1 s –1具有超过10 6的高I on / I off比，这是由参考D–A聚合物P0制成的有机场效应晶体管（OFET）的3倍。高聚合物薄膜的特征在于掠入射X射线衍射（GIXD）和原子力显微镜（AFM）。结果表明，通过BIBDF单元的存在改善了晶体结构，促进了更有序的层状堆积并促进了小π-π堆积，使BIBDF进行化学混合后电荷迁移率显着提高。
更新日期：2018-01-05
中文翻译：
通过化学混合低含量的强电子缺乏单元优化晶体结构，改善了基于靛蓝的共轭聚合物的晶体管性能
共轭聚合物由于其在柔性电子设备中的潜在应用而受到了极大的关注。除了合成新的共轭聚合物以外，还使用了不同的方法来改善电荷载流子的传输。通过化学掺混少量强电子缺陷的双（2-氧代吲哚-3-亚基）苯并二呋喃二酮（BIBDF）单元，使用简单的随机聚合物策略来增强基于靛蓝（ID）的共轭聚合物的电荷载流子迁移率。与在其聚合物主链中没有BIBDF的母体聚合物（P0）相比，通过低含量（＜5mol％）的BIBDF的化学共混显着提高了无规聚合物的空穴迁移率。具有3.75 mol％BIBDF的聚合物表现出最高的迁移率，即2.17 cm 2 V–1 s –1具有超过10 6的高I on / I off比，这是由参考D–A聚合物P0制成的有机场效应晶体管（OFET）的3倍。高聚合物薄膜的特征在于掠入射X射线衍射（GIXD）和原子力显微镜（AFM）。结果表明，通过BIBDF单元的存在改善了晶体结构，促进了更有序的层状堆积并促进了小π-π堆积，使BIBDF进行化学混合后电荷迁移率显着提高。
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