Effects of pre-damage by 500 keV argon ion implantation on deuterium-induced blistering in tungsten has been investigated. After low-energy (40 eV) and high-flux (∼10²⁴ D/m²s) deuterium plasma exposure with short exposure duration (100 s), a large increase of deuterium retention is found in the pre-damaged tungsten, while surface blistering is significantly suppressed as compared to the un-damaged one. According to elastic recoil detection analysis, a local deuterium concentration peak is observed at a depth of ∼100 nm for the un-damaged tungsten, which is supposed to be related to the surface blistering with nanometer size. Comparison of deuterium retention in the near surface (within 300 nm) and in the bulk suggests that deuterium inward diffusion is more significant in the pre-damaged tungsten. It is speculated that the creation of deuterium trap-sites and enhancement of deuterium inward diffusion give rise to an increase of critical deuterium concentration for blistering and contribute to the suppressed deuterium-induced blistering on pre-damaged tungsten under the present exposure conditions.

研究了500 keV氩离子注入的预损伤对氘在钨中引起的起泡的影响。低能量（40 eV）和高通量后（〜10 ²⁴ D / m ²s）氘等离子体暴露时间短（100 s），预损坏的钨中氘的保留量大大增加，而与未损坏的钨相比，表面起泡得到显着抑制。根据弹性反冲检测分析，对于未损坏的钨，在约100 nm的深度处观察到一个局部氘浓度峰，这与纳米尺寸的表面起泡有关。比较氘在近表面（300 nm以内）和大部分中的保留率，表明氘的向内扩散在预损坏的钨中更为显着。