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Dislocation binding as an origin for the improvement of room temperature ductility in Mg alloys
Materials Science and Engineering: A ( IF 6.1 ) Pub Date : 2018-01-05 , DOI: 10.1016/j.msea.2018.01.010
Ki-Hyun Kim , Ji Hyun Hwang , Hyo-Sun Jang , Jong Bae Jeon , Nack Joon Kim , Byeong-Joo Lee

Improving room temperature ductility and formability is a bottleneck for a wide industrial application of Mg alloys, but even the mechanism for the effect of alloying elements on the deformation behavior of Mg is not clearly known. Here, using a molecular dynamics simulation, we clarify the role of alloying elements in improving the room temperature ductility of Mg alloys: Solute atoms have stronger dislocation binding tendency and solid solution strengthening effect on basal <a> slip planes than on non-basal <c+a> slip planes, reduce the anisotropy in the critical resolved shear stress between slip systems, and eventually improves the room temperature ductility. We predict that any solute elements with a size difference from Mg can improve the room temperature ductility, once the alloying amount is carefully controlled. By proving the validity of the prediction experimentally, we provide a new guide for designing Mg alloys with improved room temperature ductility and formability.



中文翻译:

位错结合是改善镁合金室温延展性的根源

室温延展性和可成形性的提高是镁合金在工业上广泛应用的瓶颈,但是,甚至合金元素对镁变形行为的影响机理也不清楚。在这里,通过分子动力学模拟,我们阐明了合金元素在改善Mg合金的室温延展性中的作用:溶质原子对基<a>滑移平面比非基体<a>具有更强的位错结合趋势和固溶强化作用c + a>滑移平面,减小了滑移系统之间的临界解析切应力中的各向异性,并最终提高了室温延展性。我们预测,一旦小心控制合金化量,任何与Mg大小相差较大的溶质元素都会改善室温延展性。

更新日期:2018-01-05
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