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Defect-related anisotropic surface micro-structures of nonpolar a-plane GaN epitaxial films
CrystEngComm ( IF 2.6 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1039/c7ce02121f Xiaochan Li 1, 2, 3, 4, 5 , Wenliang Wang 1, 2, 3, 4, 5 , Yulin Zheng 1, 2, 3, 4, 5 , Yuan Li 1, 2, 3, 4, 5 , Liegen Huang 1, 2, 3, 4, 5 , Zhiting Lin 1, 2, 3, 4, 5 , Yuefeng Yu 1, 2, 3, 4, 5 , Guoqiang Li 1, 2, 3, 4, 5
CrystEngComm ( IF 2.6 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1039/c7ce02121f Xiaochan Li 1, 2, 3, 4, 5 , Wenliang Wang 1, 2, 3, 4, 5 , Yulin Zheng 1, 2, 3, 4, 5 , Yuan Li 1, 2, 3, 4, 5 , Liegen Huang 1, 2, 3, 4, 5 , Zhiting Lin 1, 2, 3, 4, 5 , Yuefeng Yu 1, 2, 3, 4, 5 , Guoqiang Li 1, 2, 3, 4, 5
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The anisotropic surface etching behavior of nonpolar a-plane GaN (11![[2 with combining macron]](https://www.rsc.org/images/entities/char_0032_0304.gif)
0) epitaxial films, grown by pulsed laser deposition, was investigated experimentally by wet chemical etching. Crystal-orientation dependent face state, induced by anisotropic growth kinetics, is the origination of the anisotropic properties of the a-plane GaN epitaxial films. Defects that propagate into the surface offer initial positions for the etching process. A joint effect of two factors determines the etching-exposed surface morphology, primarily including triangular prisms and pits, thus making wet chemical etching a promising tool for the investigation of defect distribution. Type I1 basal stacking faults and partial dislocations are proven to have a direct connection with etching-exposed triangular prisms and pits, respectively. This study presents a mechanism research from the standpoint of the evolution process of the surface morphology during the etching process and brings insight for further understanding of the anisotropic properties of the nonpolar GaN epitaxial films for the realization of a high polarization light-emission device, which has a broad application in display and backlighting.
中文翻译：
非极性a面GaN外延膜 的与缺陷相关的各向异性表面微观结构
非极性的各向异性表面中蚀刻行为一个面GaN（110）的外延膜，通过脉冲激光沉积生长，通过湿式化学蚀刻实验研究。由各向异性生长动力学引起的依赖于晶体取向的面态是α面GaN外延膜的各向异性性质的起源。传播到表面的缺陷为蚀刻过程提供了初始位置。两个因素的共同作用决定了暴露于蚀刻的表面形貌，主要包括三棱柱和凹坑，因此使湿法化学蚀刻成为研究缺陷分布的有前途的工具。I型1事实证明，基底堆积断层和部分位错分别与暴露于蚀刻的三角棱镜和凹坑直接相关。本研究从刻蚀过程中表面形态演变过程的角度提出了一种机理研究方法，并为进一步理解非极性GaN外延膜的各向异性特性以实现高偏振发光器件提供了见识。在显示和背光方面有广泛的应用。
更新日期：2018-01-05
0) epitaxial films, grown by pulsed laser deposition, was investigated experimentally by wet chemical etching. Crystal-orientation dependent face state, induced by anisotropic growth kinetics, is the origination of the anisotropic properties of the a-plane GaN epitaxial films. Defects that propagate into the surface offer initial positions for the etching process. A joint effect of two factors determines the etching-exposed surface morphology, primarily including triangular prisms and pits, thus making wet chemical etching a promising tool for the investigation of defect distribution. Type I1 basal stacking faults and partial dislocations are proven to have a direct connection with etching-exposed triangular prisms and pits, respectively. This study presents a mechanism research from the standpoint of the evolution process of the surface morphology during the etching process and brings insight for further understanding of the anisotropic properties of the nonpolar GaN epitaxial films for the realization of a high polarization light-emission device, which has a broad application in display and backlighting.
中文翻译：
非极性a面GaN外延膜 的与缺陷相关的各向异性表面微观结构
非极性的各向异性表面中蚀刻行为一个面GaN（11
0）的外延膜，通过脉冲激光沉积生长，通过湿式化学蚀刻实验研究。由各向异性生长动力学引起的依赖于晶体取向的面态是α面GaN外延膜的各向异性性质的起源。传播到表面的缺陷为蚀刻过程提供了初始位置。两个因素的共同作用决定了暴露于蚀刻的表面形貌，主要包括三棱柱和凹坑，因此使湿法化学蚀刻成为研究缺陷分布的有前途的工具。I型1事实证明，基底堆积断层和部分位错分别与暴露于蚀刻的三角棱镜和凹坑直接相关。本研究从刻蚀过程中表面形态演变过程的角度提出了一种机理研究方法，并为进一步理解非极性GaN外延膜的各向异性特性以实现高偏振发光器件提供了见识。在显示和背光方面有广泛的应用。
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