Ultra-low-temperature growth of CdS quantum dots on g-C3N4 nanosheets and their photocatalytic performance†,Dalton Transactions

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Ultra-low-temperature growth of CdS quantum dots on g-C3N4 nanosheets and their photocatalytic performance†
Dalton Transactions ( IF 3.5 ) Pub Date : 2018-01-05 00:00:00 , DOI: 10.1039/c7dt04355d
Ruoyu Zhang _{1,

2,

3,

4,

5} , Kai Huang _{1,

2,

3,

4,

5} , Hehe Wei _{1,

2,

3,

4,

5} , Dong Wang _{6,

7,

8} , Gang Ou _{1,

2,

3,

4,

5} , Naveed Hussain _{1,

2,

3,

4,

5} , Ziyun Huang _{1,

2,

3,

4,

5} , Cheng Zhang _{2,

5,

9,

10} , Hui Wu _{1,

2,

3,

4,

5}

Affiliation

CdS quantum dots deposited on carbon nitride (g-C₃N₄) nanosheets have been synthesized by ultra-low temperature (−60 °C) liquid phase precipitation reactions. The obtained CdS quantum dots were uniformly distributed on the surface of the g-C₃N₄ nanosheets with an average diameter of 5 nm. Correspondingly, CdS/g-C₃N₄ exhibits a highly enhanced photocatalytic performance.

中文翻译：

CdS量子点在gC ₃ N ₄纳米片上的超低温生长及其光催化性能†

沉积在氮化碳（gC ₃ N ₄）纳米片上的CdS量子点是通过超低温（-60°C）液相沉淀反应合成的。将获得的CdS量子点均匀地分布在gC ₃ N ₄纳米片的表面上，平均直径为5nm。相应地，CdS / gC ₃ N ₄表现出高度增强的光催化性能。

更新日期：2018-01-05

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