On the basis of valley degree of freedom, there would be immense potential application in valleytronics. Introducing magnetism into triangular or hexagonal lattices is a promising route to realize valley polarization, which is indispensable for applying the valley degree of freedom. In this study, we explored valley polarization by depositing a heterostructure of a MoTe₂ monolayer on the (0 0 1) surface of an antiferromagnetic RbMnCl₃ substrate. First principles-calculations showed that due to proximity-induced Zeeman effects, the MoTe₂ monolayer was drastically magnetized by the topmost Mn layer in the substrate and a very large valley splitting (about 109 meV) was achieved. Using an effective Hamiltonian model, the effect of the competition of the spin–orbit coupling (SOC) and exchange field in the system on the valley polarization was also investigated. The magnitude of the valley splitting was found to be limited by the smaller SOC value and the induced exchange field, providing information on the enhancement of the valley polarization. A device rudiment with an anomalous valley Hall effect is proposed.

中文翻译：

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磁性衬底上 单层MoTe _2中的大谷极化†

基于山谷的自由度，在山谷电子学中将有巨大的潜在应用。将磁性引入三角形或六边形的晶格中是实现谷底极化的有希望的途径，这对于应用谷底自由度是必不可少的。在这项研究中，我们通过在反铁磁RbMnCl ₃衬底的（0 0 1）表面上沉积MoTe ₂单层的异质结构来探索山谷极化。第一性原理计算表明，由于邻近诱导的塞曼效应，MoTe ₂单层被衬底中最顶层的Mn层彻底磁化，并实现了非常大的谷值劈裂（约109 meV）。使用有效的哈密顿量模型，还研究了系统中自旋-轨道耦合（SOC）和交换场之间的竞争对谷极化的影响。发现波谷分裂的幅度受到较小的SOC值和感应交换场的限制，从而提供了有关波谷极化增强的信息。提出了一种具有谷底霍尔效应反常的设备原型。