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Si‐Doped Cu(In,Ga)Se2 Photovoltaic Devices with Energy Conversion Efficiencies Exceeding 16.5% without a Buffer Layer
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2018-01-05 , DOI: 10.1002/aenm.201702391 Shogo Ishizuka 1 , Jiro Nishinaga 1 , Masayuki Iioka 1 , Hirofumi Higuchi 1 , Yukiko Kamikawa 1 , Takashi Koida 1 , Hajime Shibata 1 , Paul Fons 2
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2018-01-05 , DOI: 10.1002/aenm.201702391 Shogo Ishizuka 1 , Jiro Nishinaga 1 , Masayuki Iioka 1 , Hirofumi Higuchi 1 , Yukiko Kamikawa 1 , Takashi Koida 1 , Hajime Shibata 1 , Paul Fons 2
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In this communication, novel and simplified structure Cu(In,Ga)Se2 (CIGS) solar cells, which nominally consist of only a CIGS photoabsorber layer sandwiched between back and front contact layers but yet demonstrate high photovoltaic efficiencies, are reported. To realize this accomplishment, Si‐doped CIGS films grown by the three‐stage coevaporation method, B‐doped ZnO transparent conductive oxide front contact layers deposited by chemical vapor deposition, and heat–light soaking treatments are used. Si‐doping of CIGS films is found to modify the film surfaces and grain boundary properties and also affect the alkali metal distribution profiles in CIGS films. These effects are expected to contribute to improvements in buffer‐free CIGS device performance. Heat–light soaking treatments, which are occasionally performed to improve conventional buffer‐based CIGS device performance, are found to be also effective in enhancing buffer‐free CIGS photovoltaic efficiencies. This result suggests that the mechanism behind the beneficial effects of heat–light soaking treatments originates from CIGS bulk issues and is independent of the buffer materials. Consequently, over 16.5% efficiencies, including an independently certified value, are demonstrated from completely buffer‐free CIGS photovoltaic devices.
中文翻译：
不含缓冲层且能量转换效率超过16.5％的Si掺杂Cu（In，Ga）Se2光伏器件
在这种交流中，新颖且简化的结构Cu（In，Ga）Se 2（CIGS）太阳能电池，标称仅由夹在背面和正面接触层之间的CIGS光吸收层组成，但显示出高光伏效率。为了实现这一成就，使用了通过三阶段共蒸发法生长的Si掺杂的CIGS薄膜，通过化学气相沉积和热浸湿处理的B掺杂的ZnO透明导电氧化物前接触层。硅掺杂CIGS膜可改善膜表面和晶界性能，并影响CIGS膜中的碱金属分布。预计这些效果将有助于改善无缓冲区CIGS设备的性能。进行热光浸泡处理，以提高传统的基于缓冲液的CIGS器件的性能，已发现在提高无缓冲CIGS光伏效率方面也有效。该结果表明，热光浸泡处理的有益作用背后的机理源自CIGS的体积问题，并且与缓冲材料无关。因此，从完全无缓冲的CIGS光伏器件中可以看出，具有独立认证值的效率超过16.5％。
更新日期：2018-01-05
中文翻译：
不含缓冲层且能量转换效率超过16.5％的Si掺杂Cu（In，Ga）Se2光伏器件
在这种交流中，新颖且简化的结构Cu（In，Ga）Se 2（CIGS）太阳能电池，标称仅由夹在背面和正面接触层之间的CIGS光吸收层组成，但显示出高光伏效率。为了实现这一成就，使用了通过三阶段共蒸发法生长的Si掺杂的CIGS薄膜，通过化学气相沉积和热浸湿处理的B掺杂的ZnO透明导电氧化物前接触层。硅掺杂CIGS膜可改善膜表面和晶界性能，并影响CIGS膜中的碱金属分布。预计这些效果将有助于改善无缓冲区CIGS设备的性能。进行热光浸泡处理，以提高传统的基于缓冲液的CIGS器件的性能，已发现在提高无缓冲CIGS光伏效率方面也有效。该结果表明，热光浸泡处理的有益作用背后的机理源自CIGS的体积问题，并且与缓冲材料无关。因此，从完全无缓冲的CIGS光伏器件中可以看出，具有独立认证值的效率超过16.5％。
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