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Pyrolytically Modified Polyacrylonitrile‐Covalently Grafted MoS2 Nanosheets for a Nonvolatile Rewritable Memory Device
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-04 , DOI: 10.1002/aelm.201700397 Fei Fan 1 , Bin Zhang 1 , Sannian Song 2 , Bo Liu 2, 3 , Yaming Cao 1 , Yu Chen 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-04 , DOI: 10.1002/aelm.201700397 Fei Fan 1 , Bin Zhang 1 , Sannian Song 2 , Bo Liu 2, 3 , Yaming Cao 1 , Yu Chen 1
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The electrical conductivity of laterally ordered polyacrylonitrile (PAN) can be improved by pyrolytic modification. Newly synthesized MoS2 nanosheets covalently grafted with PAN (MoS2‐PAN) do not exhibit any electrical switching and memory effect in an indium tin oxide (ITO)/MoS2‐PAN/Au device under applied bias voltages. After annealing at 220 °C for 4 h, the resultant pyrolytically modified product “pyro‐MoS2‐PAN” shows good nonvolatile rewritable memory performance, with a large ON/OFF current ratio of 4 × 104 and lower switching on and off voltages of −1.09 and 1.24 V. Highly reproducible memory I–V loops of more than 60 consecutive cycles are achieved without clear degradation of the ON and OFF states. The first oxidation potential of pyro‐MoS2‐PAN is cathodically shifted to over 530 mV lower than that of MoS2‐PAN, indicating the higher hole injection of pyro‐MoS2‐PAN when compared to MoS2‐PAN. As expected, the nonannealed MoS2/PAN blend‐based device does not show any memory effect under the same experimental condition. After annealing at 220 °C for 4 h, the blends exhibit unstable electrical switching and rewritable memory performance.
中文翻译：
用于非易失性可重写存储设备的热解改性聚丙烯腈-共价接枝的MoS2纳米片
通过热解改性可以改善侧向有序聚丙烯腈（PAN）的电导率。与PAN共价接枝的新合成MoS 2纳米片（MoS 2 ‐PAN）在施加的偏置电压下在氧化铟锡（ITO）/ MoS 2 ‐PAN / Au器件中没有任何电开关和记忆效应。在220°C下退火4 h后，所得的热解改性产物“ pyro-MoS 2 -PAN”显示出良好的非易失性可重写存储性能，具有4×10 4的大开/关电流比和更低的开关电压-1.09和1.24 V的电压。高度可重复的存储器I – V在不明显降低ON和OFF状态的情况下，可以实现超过60个连续周期的循环。焦-MOS的第一氧化电位2 -PAN被阴极转移到超过530毫伏比的MoS的降低2 -PAN，表明焦-MOS的较高空穴注入2相比的MoS当-PAN 2 -PAN。不出所料，在相同的实验条件下，未退火的基于MoS 2 / PAN混合的器件不会显示任何记忆效应。在220°C下退火4小时后，共混物显示出不稳定的电开关和可重写的存储性能。
更新日期：2018-01-04
中文翻译：
用于非易失性可重写存储设备的热解改性聚丙烯腈-共价接枝的MoS2纳米片
通过热解改性可以改善侧向有序聚丙烯腈（PAN）的电导率。与PAN共价接枝的新合成MoS 2纳米片（MoS 2 ‐PAN）在施加的偏置电压下在氧化铟锡（ITO）/ MoS 2 ‐PAN / Au器件中没有任何电开关和记忆效应。在220°C下退火4 h后，所得的热解改性产物“ pyro-MoS 2 -PAN”显示出良好的非易失性可重写存储性能，具有4×10 4的大开/关电流比和更低的开关电压-1.09和1.24 V的电压。高度可重复的存储器I – V在不明显降低ON和OFF状态的情况下，可以实现超过60个连续周期的循环。焦-MOS的第一氧化电位2 -PAN被阴极转移到超过530毫伏比的MoS的降低2 -PAN，表明焦-MOS的较高空穴注入2相比的MoS当-PAN 2 -PAN。不出所料，在相同的实验条件下，未退火的基于MoS 2 / PAN混合的器件不会显示任何记忆效应。在220°C下退火4小时后，共混物显示出不稳定的电开关和可重写的存储性能。
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