Novel Optoelectronic Devices: Transition‐Metal‐Dichalcogenide‐Based 2D Heterostructures,Advanced Electronic Materials

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Novel Optoelectronic Devices: Transition‐Metal‐Dichalcogenide‐Based 2D Heterostructures
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-04 , DOI: 10.1002/aelm.201700335
Qingsheng Zeng ₁ , Zheng Liu _{1,

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Affiliation

Over the past decade, graphene and other 2D materials have attracted much attention in both fundamental studies and potential applications due to their extraordinary properties. In particular, heterostructures based on these van der Waals (vdW) materials have become one of the leading hot topics in the electronic and optoelectronic field. As representative photoactive 2D materials, transition metal dichalcogenides (TMDs) play a critical role in the creation of 2D optoelectronic heterojunctions themselves or in combination with other 2D materials. Here, the optoelectronics of three types of TMD‐based 2D heterostructures are reviewed: (1) heterostructures between different TMDs, including vertical vdW heterojunctions fabricated by mechanical transfer and direct synthesis, and lateral in‐plane heterostructures formed via epitaxial growth; (2) heterostructures between TMDs and graphene built by stacking, vdW epitaxy, and lateral assembly; (3) heterostructures between TMDs and other novel 2D materials, such as black phosphorus and GaTe. The operation mechanism of all these optoelectronic devices is discussed.

中文翻译：

新型光电器件：基于过渡金属二硫属化物的二维异质结构

在过去的十年中，石墨烯和其他2D材料因其非凡的性能而在基础研究和潜在应用中引起了极大的关注。尤其是，基于这些范德华（vdW）材料的异质结构已成为电子和光电领域的主要热点话题之一。作为代表性的光敏2D材料，过渡金属二硫化碳（TMD）在自身创建2D光电异质结或与其他2D材料组合中起着至关重要的作用。在此，我们将对三种基于TMD的2D异质结构的光电子学进行综述：（1）不同TMD之间的异质结构，包括通过机械转移和直接合成制备的垂直vdW异质结，以及通过外延生长形成的横向面内异质结构; （2）通过堆叠，vdW外延和横向组装建立的TMD和石墨烯之间的异质结构；（3）TMD与其他新型2D材料（例如黑磷和GaTe）之间的异质结构。讨论了所有这些光电器件的工作机理。

更新日期：2018-01-04

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