We report the evaluation of charge transport parameters of four p-type dichlorinated-2,1,3-benzothiadiazole (2ClBT) based conjugated polymers end-capped with different electron-donor units (thiophene (T), thieno[3,2-b]thiophene (TT), 2,2′-bithiophene (DT), and (E)-2-(2-(thiophen-2-yl)vinyl)thiophene (TVT)) in electrolyte gated organic field-effect transistors operating at a driving voltage of −2 V. Remarkable hole mobility improvement of 0.13–0.56 cm²V⁻¹s⁻¹ were achieved in 2ClBTs based polymers, with P2ClBT-DT recording the highest mobility of 0.56 cm²V⁻¹s⁻¹ and current on/off ratio ∼10⁷. Interestingly, a positive threshold voltage shift (ΔV_Th) was observed in the transfer characteristics from the linear to saturation regime of all the 2ClBTs based polymer electrolyte gated OFET devices of L = 10 μm, contrary to devices with conventional poly(methyl methacrylate) gate dielectric, which showed a negative ΔV_Th shift. Among the 2ClBTs based polymers, P2ClBT-TVT devices showed the lowest mobility and ΔV_Th shift, which is attributed to severe ion diffusion in the polymer semiconducting layer owing to the vinyl group backbone susceptible to electrochemical doping. Our results emphasize essential selection consideration of the monomeric moieties, molecular ordering, π-π stacking and backbone planarity of conjugated polymers for electrolyte based organic devices.

我们报告了对四种以p型二氯化2,1,3-苯并噻二唑（2ClBT）为基的共轭聚合物的电荷输运参数的评估，这些聚合物封端了不同的电子给体单元（噻吩（T），噻吩并[3,2- b在以下条件下操作的电解质门控有机场效应晶体管中的]噻吩（TT），2,2'-联噻吩（DT）和（E）-2-（2-（噻吩-2-基）乙烯基）噻吩（TVT））驱动电压为-2V 。在2ClBTs基聚合物中，空穴迁移率显着提高了0.13-0.56 cm ² V ^-1 s ^-1，其中P2ClBT-DT的迁移率最高，为0.56 cm ² V ^-1 s ^-1和。电流开/关比〜10 ⁷。有趣的是， 与传统的聚（甲基丙烯酸甲酯）器件相反，在所有L = 10μm的基于2ClBTs的聚合物电解质门禁型OFET器件中，从线性到饱和态的转移特性中观察到正阈值电压偏移（ΔV _Th）栅电介质，它显示出负ΔV _Th漂移。在基于2ClBT的聚合物中，P2ClBT-TVT器件显示出最低的迁移率和ΔV _Th由于乙烯基主链易受电化学掺杂，这归因于聚合物半导电层中的严重离子扩散。我们的结果强调了用于电解质基有机器件的共轭聚合物的单体部分，分子有序性，π-π堆积和主链平面性的基本选择考虑。