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Vacuum-Ultraviolet Photovoltaic Detector
ACS Nano ( IF 15.8 ) Pub Date : 2018-01-09 00:00:00 , DOI: 10.1021/acsnano.7b06633
Wei Zheng 1 , Richeng Lin 1 , Junxue Ran 2 , Zhaojun Zhang 1 , Xu Ji 1 , Feng Huang 1
Affiliation  

Over the past two decades, solar- and astrophysicists and material scientists have been researching and developing new-generation semiconductor-based vacuum ultraviolet (VUV) detectors with low power consumption and small size for replacing traditional heavy and high-energy-consuming microchannel-detection systems, to study the formation and evolution of stars. However, the most desirable semiconductor-based VUV photovoltaic detector capable of achieving zero power consumption has not yet been achieved. With high-crystallinity multistep epitaxial grown AlN as a VUV-absorbing layer for photogenerated carriers and p-type graphene (with unexpected VUV transmittance >96%) as a transparent electrode to collect excited holes, we constructed a heterojunction device with photovoltaic detection for VUV light. The device exhibits an encouraging VUV photoresponse, high external quantum efficiency (EQE) and extremely fast tempera response (80 ns, 104–106 times faster than that of the currently reported VUV photoconductive devices). This work has provided an idea for developing zero power consumption and integrated VUV photovoltaic detectors with ultrafast and high-sensitivity VUV detection capability, which not only allows future spacecraft to operate with longer service time and lower launching cost but also ensures an ultrafast evolution of interstellar objects.

中文翻译:

真空紫外光电探测器

在过去的二十年中,太阳和天体物理学家和材料科学家一直在研究和开发具有低功耗和小尺寸的新一代基于半导体的真空紫外(VUV)检测器,以取代传统的笨重且耗能高的微通道检测系统,研究恒星的形成和演化。但是,尚未实现能够实现零功耗的最理想的基于半导体的VUV光电检测器。以高结晶度的多步外延生长的AlN作为光生载流子的VUV吸收层,并使用p型石墨烯(VUV意外透射率> 96%的透明电极)作为透明电极来收集激发空穴,我们构建了一种具有光伏检测VUV的异质结器件光。比目前报道的VUV光电导设备快4 – 10 6倍)。这项工作为开发零功耗和具有超快和高灵敏度VUV检测能力的集成VUV光电探测器提供了一个思路,这不仅使未来的航天器能够以更长的服务时间运行并降低发射成本,而且还可以确保星际飞船的超快发展对象。
更新日期:2018-01-09
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