Abstract In this study, we thermodynamically reviewed the suitable growth process conditions of α-SiC in the Si-C-H system using tetramethylsilane (TMS) and in the Si-C-H-Cl system using methyltrichlorosilane (MTS). In the Si-C-H-Cl system, pure solid SiC was obtained at high temperatures under a larger range of hydrogen dilution ratios than that tolerated in the Si-C-H system. X-ray diffraction and micro-Raman analysis of the products obtained at 1900, 2000, and 2100 °C showed that the α-SiC becomes more dominant with increasing temperature in the Si-C-H-Cl system. While TMS was unsuitable for high temperature processing due to its high C/Si ratio, MTS was found to be appropriate for growing α-SiC crystals at high temperatures under a range of conditions. These results indicate that a novel method to grow α-SiC single crystals through HTCVD using MTS as a precursor could be established.

中文翻译：

---

在 Si-CH 和 Si-CH-Cl 系统中合成 α-SiC 的高温化学气相沉积工艺的热力学设计

摘要 在本研究中，我们从热力学角度回顾了 α-SiC 在使用四甲基硅烷 (TMS) 的 Si-CH 体系和使用甲基三氯硅烷 (MTS) 的 Si-CH-Cl 体系中的合适生长工艺条件。在 Si-CH-Cl 系统中，在比 Si-CH 系统允许的范围更大的氢稀释比下，在高温下获得纯固体 SiC。在 1900、2000 和 2100 °C 下获得的产物的 X 射线衍射和显微拉曼分析表明，在 Si-CH-Cl 体系中，随着温度的升高，α-SiC 变得更加占优势。虽然 TMS 由于其高 C/Si 比而不适合高温加工，但发现 MTS 适合在一系列条件下在高温下生长 α-SiC 晶体。