Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2,Advanced Materials Interfaces

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Atomic Structure of Domain and Interphase Boundaries in Ferroelectric HfO2
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2018-01-03 , DOI: 10.1002/admi.201701258
Everett D. Grimley ₁ , Tony Schenk ₂ , Thomas Mikolajick _{2,

3} , Uwe Schroeder ₂ , James M. LeBeau ₁

Affiliation

Though ferroelectric HfO₂ thin films are now well characterized, little is currently known about their grain substructure. In particular, the formation of domain and phase boundaries requires investigation to better understand phase stabilization, switching, and phase interconversion. Here, scanning transmission electron microscopy is applied to investigate the atomic structure of boundaries in these materials. It is found that orthorhombic/orthorhombic domain walls and coherent orthorhombic/monoclinic interphase boundaries form throughout individual grains. The results inform how interphase boundaries can impose strain conditions that may be key to phase stabilization. Moreover, the atomic structure near interphase boundary walls suggests potential for their mobility under bias, which has been speculated to occur in perovskite morphotropic phase boundary systems by mechanisms similar to domain boundary motion.

中文翻译：

HfO2铁电畴和相界边界的原子结构

虽然铁电的HfO ₂薄膜已被很好地表征，目前对它们的晶粒亚结构知之甚少。尤其是，域边界和相位边界的形成需要进行研究以更好地理解相位稳定，切换和相位互转换。在这里，应用扫描透射电子显微镜研究这些材料中边界的原子结构。发现正交晶/斜晶畴壁和相干正交晶/单斜晶间相界在整个单个晶粒中形成。结果表明相间边界如何施加应变条件，这可能是相位稳定的关键。此外，相间边界壁附近的原子结构暗示了它们在偏压下的迁移性的潜力，

更新日期：2018-01-03

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