Lead-free perovskite oxide thin films prepared by alloying of titanates and materials with lower melting points are shown to have enhanced ferroelectric and dielectric properties. BaTiO₃ (or SrTiO₃) with 25% addition of BiFeO₃ has much improved crystalline perfection because of the lower melting point of the BiFeO₃ giving enhanced growth kinetics. The maximum dielectric peak temperature of BaTiO₃ is increased by ~ 200 °C and leakage currents are reduced by up to a factor of ~ 100. The loss tangent reduces up to 300 °C, with a factor of > 14 reduction at room temperature. The dielectric breakdown strength is higher by a factor of ~ 3 (> 2200 kV cm⁻¹) and from room temperature up to 500 °C the dielectric constant is > 1000. Also, a low variation of dielectric constant of ~ 9% from room temperature to 330 °C is obtained, compared to ~ 110% for BaTiO₃. The maximum polarization (P_max) is double that of BaTiO₃, at 125.3 μC cm⁻². The film has high energy storage densities of > 52 J cm⁻³ at 2050 kV cm⁻¹, matching Pb-based ferroelectric films. The strongly improved performance is important for applications in energy storage and in high temperature (up to 300 °C) capacitors as well as wider application in other electronic and energy technologies.

通过钛酸酯和具有较低熔点的材料的合金化制备的无铅钙钛矿氧化物薄膜具有增强的铁电和介电性能。的BaTiO ₃（或的SrTiO ₃），用25％的BiFeO加入的₃有很大的改善，因为的的BiFeO较低熔点的结晶完整性₃给人增强的生长动力学。BaTiO ₃的最大介电峰值温度提高了约200°C，泄漏电流降低了约100倍。损耗角正切降低到300°C，在室温下降低了> 14倍。介电击穿强度提高了约3倍（> 2200 kV cm ^-1），并且从室温到500°C，介电常数>1000。而且，从室温到330°C，介电常数的变化很小，约为〜9％，而BaTiO ₃约为110％。在125.3μCcm ^-2时，最大极化强度（P _max）是BaTiO _3的两倍。该膜在2050 kV cm ^-1时具有> 52 J cm ^-3的高储能密度，与基于Pb的铁电膜相匹配。性能的大幅提高对于储能和高温（最高300°C）电容器中的应用以及在其他电子和能源技术中的广泛应用非常重要。