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Enhanced Stability of Black Phosphorus Field‐Effect Transistors via Hydrogen Treatment
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-03 , DOI: 10.1002/aelm.201700455 Bensong Wan 1, 2 , Qionghua Zhou 3 , Junying Zhang 2 , Yue Wang 4 , Bingchao Yang 5 , Weiming Lv 1 , Baoshun Zhang 1 , Zhongming Zeng 1 , Qian Chen 3 , Jinlan Wang 3 , Wenhong Wang 4 , Fusheng Wen 5 , Jianyong Xiang 5 , Bo Xu 5 , Zhisheng Zhao 5 , Yongjun Tian 5 , Zhongyuan Liu 5
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2018-01-03 , DOI: 10.1002/aelm.201700455 Bensong Wan 1, 2 , Qionghua Zhou 3 , Junying Zhang 2 , Yue Wang 4 , Bingchao Yang 5 , Weiming Lv 1 , Baoshun Zhang 1 , Zhongming Zeng 1 , Qian Chen 3 , Jinlan Wang 3 , Wenhong Wang 4 , Fusheng Wen 5 , Jianyong Xiang 5 , Bo Xu 5 , Zhisheng Zhao 5 , Yongjun Tian 5 , Zhongyuan Liu 5
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Atomically thin black phosphorus (BP) exhibits great potential for wide applications in future electronic and optoelectronic devices. However, BP exhibits fast ambient degradation and is thus severely limited in practical applications. Here, a simple strategy using hydrogen treatment to enhance the environmental stability of BP flakes is reported. Owing to the drastically suppressed ambient degradation by hydrogen treatment, atomic BP flakes are just slightly corroded on the surface even after up to 4 weeks in air, and more impressively, the BP field‐effect transistors still maintain over 85% of their initial mobility and ION/IOFF ratio. First‐principle calculations indicate that the hydrogen molecules are probably embedded between BP layers, and shift down the conduction band minimum, which strongly protects against the formation of superoxide on the surface and thus suppresses the ambient degradation of BP. This study provides a simple and nondestructive route to achieve air‐stable BP devices.
中文翻译：
通过氢处理增强了黑磷场效应晶体管的稳定性
原子稀薄的黑磷（BP）在未来的电子和光电设备中具有广阔的应用前景。然而，BP表现出快速的环境降解，因此在实际应用中受到严重限制。在这里，报道了使用氢处理来增强BP片的环境稳定性的简单策略。由于氢处理对环境降解的显着抑制，即使在空气中放置了多达4周，原子BP薄片也仅在表面上受到轻微腐蚀，而且更令人印象深刻的是，BP场效应晶体管仍保持其初始迁移率的85％以上，并且我开/我关比率。第一性原理计算表明，氢分子可能嵌入在BP层之间，并向下移动了最小导带，这有力地防止了表面上超氧化物的形成，从而抑制了BP在环境中的降解。这项研究提供了一种简单且无损的方法来实现空气稳定的BP设备。
更新日期：2018-01-03
中文翻译：
通过氢处理增强了黑磷场效应晶体管的稳定性
原子稀薄的黑磷（BP）在未来的电子和光电设备中具有广阔的应用前景。然而，BP表现出快速的环境降解，因此在实际应用中受到严重限制。在这里，报道了使用氢处理来增强BP片的环境稳定性的简单策略。由于氢处理对环境降解的显着抑制，即使在空气中放置了多达4周，原子BP薄片也仅在表面上受到轻微腐蚀，而且更令人印象深刻的是，BP场效应晶体管仍保持其初始迁移率的85％以上，并且我开/我关比率。第一性原理计算表明，氢分子可能嵌入在BP层之间，并向下移动了最小导带，这有力地防止了表面上超氧化物的形成，从而抑制了BP在环境中的降解。这项研究提供了一种简单且无损的方法来实现空气稳定的BP设备。
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