Facile control over the morphology of phase pure tin monosulfide (SnS) thin films, a promising future absorber for thin film solar cells, is enabled by controlling the growth kinetics in vapor transport deposition of congruently evaporated SnS. The pressure during growth is found to be a key factor in modifying the final shape of the SnS grains. The optimized cube‐like SnS shows p‐type with the apparent carrier concentration of ≈10¹⁷ cm⁻³ with an optical bandgap of 1.32 eV. The dense and flat surface morphology of 1 µm thick SnS combined with the minimization of pinholes directly leads to improved diode quality and increased shunt resistance of the SnS/CdS heterojunction (cell area of 0.30 cm²). An open‐circuit voltage of up to 0.3068 V is achieved, which is independently characterized at the Korea Institute of Energy Research (KIER). Detailed high‐resolution transmission electron microscopy analysis confirms the absence of detrimental secondary phases such as Sn₂S₃ or SnS₂ in the SnS grains or at intergrain boundaries. The initial efficiency level of 98.5% is maintained even after six months of storage in air, and the final efficiency of the champion SnS/CdS cell, certified at the KIER, is 2.938% with an open‐circuit voltage of 0.2912 V.

中文翻译：

---

用于薄膜太阳能电池的纯相SnS吸收剂的动力学控制生长：使用SnS / CdS异质结可实现近3％的效率和长期稳定性

通过控制全蒸发的SnS的气相传输沉积过程中的生长动力学，可以轻松控制相纯一硫化锡（SnS）薄膜的形态，这是薄膜太阳能电池的有希望的未来吸收剂。发现生长过程中的压力是改变SnS晶粒最终形状的关键因素。经过优化的立方体状SnS表现出p型，表观载流子浓度约为10 ¹⁷ cm ^-3，带隙为1.32 eV。1 µm厚的SnS的致密而平坦的表面形貌以及最小化的针孔直接提高了二极管的质量，并增加了SnS / CdS异质结的分流电阻（单元面积为0.30 cm ²）。实现了高达0.3068 V的开路电压，这是韩国能源研究所（KIER）的独立特征。详细的高分辨率透射电子显微镜分析证实，SnS晶粒或晶界处不存在有害的次级相，如Sn ₂ S ₃或SnS ₂。即使在空气中存放六个月后，仍可保持98.5％的初始效率水平，经KIER认证的冠军SnS / CdS电池的最终效率为2.938％，开路电压为0.2912V。