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Synthesis of Crystalline Black Phosphorus Thin Film on Sapphire
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-03 , DOI: 10.1002/adma.201703748 Cheng Li 1 , Ye Wu 2, 3 , Bingchen Deng 1 , Yujun Xie 4 , Qiushi Guo 1 , Shaofan Yuan 1 , Xiaolong Chen 1 , Maruf Bhuiyan 1 , Zishan Wu 5 , Kenji Watanabe 6 , Takashi Taniguchi 6 , Hailiang Wang 5 , Judy J. Cha 4 , Michael Snure 7 , Yingwei Fei 2 , Fengnian Xia 1
Advanced Materials ( IF 27.4 ) Pub Date : 2018-01-03 , DOI: 10.1002/adma.201703748 Cheng Li 1 , Ye Wu 2, 3 , Bingchen Deng 1 , Yujun Xie 4 , Qiushi Guo 1 , Shaofan Yuan 1 , Xiaolong Chen 1 , Maruf Bhuiyan 1 , Zishan Wu 5 , Kenji Watanabe 6 , Takashi Taniguchi 6 , Hailiang Wang 5 , Judy J. Cha 4 , Michael Snure 7 , Yingwei Fei 2 , Fengnian Xia 1
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Black phosphorus (BP) has recently attracted significant attention due to its exceptional physical properties. Currently, high‐quality few‐layer and thin‐film BP are produced primarily by mechanical exfoliation, limiting their potential in future applications. Here, the synthesis of highly crystalline thin‐film BP on 5 mm sapphire substrates by conversion from red to black phosphorus at 700 °C and 1.5 GPa is demonstrated. The synthesized ≈50 nm thick BP thin films are polycrystalline with a crystal domain size ranging from 40 to 70 µm long, as indicated by Raman mapping and infrared extinction spectroscopy. At room temperature, field‐effect mobility of the synthesized BP thin film is found to be around 160 cm2 V−1 s−1 along armchair direction and reaches up to about 200 cm2 V−1 s−1 at around 90 K. Moreover, red phosphorus (RP) covered by exfoliated hexagonal boron nitride (hBN) before conversion shows atomically sharp hBN/BP interface and perfectly layered BP after the conversion. This demonstration represents a critical step toward the future realization of large scale, high‐quality BP devices and circuits.
中文翻译：
蓝宝石上晶体黑色磷薄膜的合成
黑磷（BP）由于其卓越的物理性能，最近引起了广泛的关注。当前，高质量的薄层和薄膜BP主要是通过机械剥离技术生产的，从而限制了它们在未来应用中的潜力。在此，通过在700°C和1.5 GPa下从红磷转化为黑磷，在5毫米蓝宝石衬底上合成了高度结晶的薄膜BP。合成的≈50nm厚的BP薄膜是多晶的，其晶畴尺寸范围为40至70 µm，如拉曼作图和红外消光光谱法所示。在室温下，发现合成的BP薄膜的场效应迁移率约为160 cm 2 V -1 s -1沿扶手椅方向，并在约90 K时达到约200 cm 2 V -1 s -1。此外，在转化前被剥落的六方氮化硼（hBN）覆盖的红磷（RP）表现出原子锐利的hBN / BP界面并完美地分层BP转换后。该演示代表了未来实现大规模，高质量BP设备和电路的关键一步。
更新日期：2018-01-03
中文翻译：
蓝宝石上晶体黑色磷薄膜的合成
黑磷（BP）由于其卓越的物理性能，最近引起了广泛的关注。当前，高质量的薄层和薄膜BP主要是通过机械剥离技术生产的，从而限制了它们在未来应用中的潜力。在此，通过在700°C和1.5 GPa下从红磷转化为黑磷，在5毫米蓝宝石衬底上合成了高度结晶的薄膜BP。合成的≈50nm厚的BP薄膜是多晶的，其晶畴尺寸范围为40至70 µm，如拉曼作图和红外消光光谱法所示。在室温下，发现合成的BP薄膜的场效应迁移率约为160 cm 2 V -1 s -1沿扶手椅方向，并在约90 K时达到约200 cm 2 V -1 s -1。此外，在转化前被剥落的六方氮化硼（hBN）覆盖的红磷（RP）表现出原子锐利的hBN / BP界面并完美地分层BP转换后。该演示代表了未来实现大规模，高质量BP设备和电路的关键一步。
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