当前位置: X-MOL 学术Adv. Mater. › 论文详情
Nanoarchitectonics for Controlling the Number of Dopant Atoms in Solid Electrolyte Nanodots
Advanced Materials ( IF 19.791 ) Pub Date : 2018-01-03 , DOI: 10.1002/adma.201703261
Alpana Nayak, Satomi Unayama, Seishiro Tai, Tohru Tsuruoka, Rainer Waser, Masakazu Aono, Ilia Valov, Tsuyoshi Hasegawa

Abstract

Controlling movements of electrons and holes is the key task in developing today's highly sophisticated information society. As transistors reach their physical limits, the semiconductor industry is seeking the next alternative to sustain its economy and to unfold a new era of human civilization. In this context, a completely new information token, i.e., ions instead of electrons, is promising. The current trend in solid-state nanoionics for applications in energy storage, sensing, and brain-type information processing, requires the ability to control the properties of matter at the ultimate atomic scale. Here, a conceptually novel nanoarchitectonic strategy is proposed for controlling the number of dopant atoms in a solid electrolyte to obtain discrete electrical properties. Using α-Ag2+δS nanodots with a finite number of nonstoichiometry excess dopants as a model system, a theory matched with experiments is presented that reveals the role of physical parameters, namely, the separation between electrochemical energy levels and the cohesive energy, underlying atomic-scale manipulation of dopants in nanodots. This strategy can be applied to different nanoscale materials as their properties strongly depend on the number of doping atoms/ions, and has the potential to create a new paradigm based on controlled single atom/ion transfer.

Thumbnail image of graphical abstract

A novel nanoarchitectonic strategy for controlling the number of dopant atoms in a solid electrolyte to enable discrete electrical properties at the atomic scale is proposed. Theoretical and experimental studies on α-Ag2+δS nanodots reveal the role of electrochemical energy levels and cohesive energy for single ion/atom transfer processes desired in nanoionic devices for the next technological frontier.

更新日期:2018-01-03

 

Some contents have been Reproduced with permission of the American Chemical Society.
Some contents have been Reproduced by permission of The Royal Society of Chemistry.
分享到
评论: 0
期刊列表
Wiley论文编辑服务,每月大奖送不停!
南京大学化学化工学院谢劲课题组招聘启事
广州大学水污染过程与控制研究团队招聘启事
华中师范大学第一届国际青年学者化学科学论坛
【问答】谍反应有哪些重要应用?
X-MOL近期新增451种期刊(20171216)
2017年中科院JCR分区化学大类列表
试剂库存管理
化合物查询
down
wechat
bug