The high and low field ferroelectric response of freestanding PbZr_0.52Ti_0.48O₃ (PZT) films, with texture varying from 100% (001) to 100% (111) was investigated via 500 nm thick PZT unimorphs deposited on the same substrate. It is shown that the ferroelectric and piezoelectric properties depend strongly on texture, and the effective transverse strain and stress coefficients vary linearly with %(001) and %(111) texture factors. PZT films with 100% (001) orientation displayed 150%, 140%, and 80% larger linear piezoelectric strain coefficient, saturated strain coefficient, and saturated stress coefficient, respectively, compared to films with 100% (111) orientation. As a result, pure (001) textured PZT films with 20% higher dielectric constant have 50% higher figure of merit in sensing than films with pure (111) texture. The piezoelectric and ferroelectric properties of all but one combinations of (001) and (111) texture were shown for the first time to be bounded by the values for 100% (001) and 100% (111) texture. A notable exception was PZT films comprised of 73% (001) and 27% (111) texture which showed stable piezoelectric coefficients at all electric fields, with major technological implication to low power microdevices. Finally, the coercive field was shown to decrease with (001) texture factor and excess‐Pb in the PZT and the PbTiO₃ seed layer.

中文翻译：

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通过纹理控制PZT薄膜的铁电和线性压电响应

独立式PbZr _0.52 Ti _0.48 O ₃的高场和低场铁电响应通过沉积在同一基材上的500 nm厚PZT单晶硅研究了质地从100％（001）到100％（111）不等的（PZT）薄膜。结果表明，铁电和压电特性强烈依赖于织构，有效横向应变和应力系数随织构系数（％）（001）和（％）（111）线性变化。与100％（111）取向的膜相比，具有100％（001）取向的PZT膜分别显示出150％，140％和80％的线性压电应变系数，饱和应变系数和饱和应力系数。结果，介电常数高20％的纯（001）织构PZT膜的感测品质因数比纯（111）织构的膜高50％。首次显示了（001）和（111）纹理的一个组合之外的所有组合的压电和铁电性能，首次受100％（001）和100％（111）纹理的值限制。一个显着的例外是PZT膜，由73％（001）和27％（111）的织构组成，在所有电场下均显示出稳定的压电系数，这对低功率微器件具有重要的技术意义。最后，在PZT和PbTiO中，矫顽场显示出随（001）织构因子和过量的Pb而减小₃种子层。