Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV,ACS Energy Letters

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Solar Water Oxidation by an InGaN Nanowire Photoanode with a Bandgap of 1.7 eV
ACS Energy Letters ( IF 19.3 ) Pub Date : 2018-01-09 00:00:00 , DOI: 10.1021/acsenergylett.7b01138
Sheng Chu ₁ , Srinivas Vanka _{1,

2} , Yichen Wang ₁ , Jiseok Gim ₃ , Yongjie Wang ₂ , Yong-Ho Ra ₁ , Robert Hovden ₃ , Hong Guo ₄ , Ishiang Shih ₁ , Zetian Mi _{1,

2}

Affiliation

The performance of overall solar water splitting has been largely limited by the half-reaction of water oxidation. Here, we report a 1.7 eV bandgap InGaN nanowire photoanode for efficient solar water oxidation. It produces a low onset potential of 0.1 V versus a reversible hydrogen electrode (RHE) and a high photocurrent density of 5.2 mA/cm² at a potential as low as 0.6 V versus RHE. The photoanode yields a half-cell solar energy conversion efficiency up to 3.6%, a record for a single-photon photoanode to our knowledge. Furthermore, in the presence of hole scavengers, the photocurrent density of the InGaN photoanode reaches 21.2 mA/cm² at 1.23 V versus RHE, which approaches the theoretical limit for a 1.7 eV InGaN absorber. The InGaN nanowire photoanode may serve as an ideal top cell in a photoelectrochemical tandem device when stacked with a 0.9–1.2 eV bandgap bottom cell, which can potentially deliver solar-to-hydrogen efficiency over 25%.

中文翻译：

带隙为1.7 eV的InGaN纳米线光电阳极对太阳能的氧化

太阳能总水分解的性能在很大程度上受到水氧化的半反应的限制。在这里，我们报告了一个1.7 eV带隙InGaN纳米线光电阳极，用于有效的太阳能氧化。与可逆氢电极（RHE）相比，它产生了0.1 V的低启动电位，而与RHE相比，它在低至0.6 V的电位下却产生了5.2 mA / cm ²的高光电流密度。光电阳极产生的半电池太阳能转换效率高达3.6％，这是我们所知的单光子光电阳极的记录。另外，在存在空穴清除剂的情况下，InGaN光阳极的光电流密度达到21.2mA / cm ^2。相对于RHE为1.23 V，这接近1.7 eV InGaN吸收体的理论极限。当与0.9–1.2 eV带隙底部电池堆叠在一起时，InGaN纳米线光阳极可作为光电化学串联设备中理想的顶部电池，潜在地提供超过25％的太阳能效率。

更新日期：2018-01-09

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