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Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi1–xInx)2Se3 Nanodevices
ACS Nano ( IF 15.8 ) Pub Date : 2018-01-08 00:00:00 , DOI: 10.1021/acsnano.7b08054 Minhao Zhang 1 , Huaiqiang Wang 2 , Kejun Mu 3 , Pengdong Wang 3 , Wei Niu 1 , Shuai Zhang 2 , Guiling Xiao 4 , Yequan Chen 1 , Tong Tong 1 , Dongzhi Fu 2 , Xuefeng Wang 1, 5 , Haijun Zhang 2, 5 , Fengqi Song 2, 5 , Feng Miao 2, 5 , Zhe Sun 3 , Zhengcai Xia 4 , Xinran Wang 1, 5 , Yongbing Xu 1, 5 , Baigeng Wang 2, 5 , Dingyu Xing 2, 5 , Rong Zhang 1, 5
ACS Nano ( IF 15.8 ) Pub Date : 2018-01-08 00:00:00 , DOI: 10.1021/acsnano.7b08054 Minhao Zhang 1 , Huaiqiang Wang 2 , Kejun Mu 3 , Pengdong Wang 3 , Wei Niu 1 , Shuai Zhang 2 , Guiling Xiao 4 , Yequan Chen 1 , Tong Tong 1 , Dongzhi Fu 2 , Xuefeng Wang 1, 5 , Haijun Zhang 2, 5 , Fengqi Song 2, 5 , Feng Miao 2, 5 , Zhe Sun 3 , Zhengcai Xia 4 , Xinran Wang 1, 5 , Yongbing Xu 1, 5 , Baigeng Wang 2, 5 , Dingyu Xing 2, 5 , Rong Zhang 1, 5
Affiliation
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We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi1–xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a −3%:–1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.
中文翻译：
（Bi 1– x In x）2 Se 3纳米器件中拓扑相变诱导的三轴矢量磁阻。
我们报告了在x = 0.08的非磁性（Bi 1– x In x）2 Se 3纳米器件中三轴矢量磁阻（MR）的研究。我们显示了一个哑铃形的平面负磁阻，直到室温，以及一个大的平面外正磁阻。在2 K时，三个方向的MR大约为-3％：– 1％：225％。通过厚度和成分相关的磁传输测量，我们表明面内负MR是由于拓扑相变引起的在拓扑临界点附近增强了表面间耦合。我们的设备显示出室温自旋电子器件在矢量磁传感器等应用中的巨大潜力。
更新日期：2018-01-08
中文翻译：
（Bi 1– x In x）2 Se 3纳米器件中拓扑相变诱导的三轴矢量磁阻。
我们报告了在x = 0.08的非磁性（Bi 1– x In x）2 Se 3纳米器件中三轴矢量磁阻（MR）的研究。我们显示了一个哑铃形的平面负磁阻，直到室温，以及一个大的平面外正磁阻。在2 K时，三个方向的MR大约为-3％：– 1％：225％。通过厚度和成分相关的磁传输测量，我们表明面内负MR是由于拓扑相变引起的在拓扑临界点附近增强了表面间耦合。我们的设备显示出室温自旋电子器件在矢量磁传感器等应用中的巨大潜力。
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