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Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2018-01-12 00:00:00 , DOI: 10.1021/acs.jpcc.7b10666
Di Wu 1, 2 , Yingguo Yang 3 , Peng Zhu 2 , Xiaoming Zheng 1 , Xiaoliu Chen 1 , Jiao Shi 1 , Fei Song 3 , Xingyu Gao 3 , Xueao Zhang 4 , Fangping Ouyang 1, 2 , Xiang Xiong 2 , Yongli Gao 1, 2, 5 , Han Huang 1, 2
Affiliation  

Molybdenum dioxide (MoO2) has attracted many interests due to its unique properties and potential applications. Here, we report the synthesis of high quality MoO2@MoS2 nanorods on c-sapphire substrates through an atmospheric pressure chemical vapor deposition (APCVD) approach. Optical microscopy (OM), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and (grazing incidence) X-ray diffraction ((GI)XRD) measurements reveal that these MoO2 nanorods exhibit epitaxial growth behaviors on c-sapphire substrates with the orientation relationship of MoO2(100)∥sapphire(0001) and MoO2 ⟨001⟩ aligned well with sapphire ⟨101̅0⟩. Raman spectroscopy/imaging, energy dispersive spectroscopy (EDS), and GIXRD results disclose that such MoO2 nanorods are wrapped by MoS2 (MoO2@MoS2). Devices based on transferred individual MoO2@MoS2 nanorods show a resistivity of ∼1.65 × 10–4 Ω·cm, comfirming that such nanorods possess higher crystalline degree. Our findings will be helpful for the applications of MoO2@MoS2 in the fields of nanoelectronic devices.

中文翻译:

高取向金属MoO 2 @MoS 2纳米棒在C蓝宝石上的外延生长

二氧化钼(MoO 2)由于其独特的性能和潜在的应用而吸引了许多兴趣。在这里,我们报告通过大气压化学气相沉积(APCVD)方法在c蓝宝石衬底上合成高质量MoO 2 @MoS 2纳米棒。光学显微镜(OM),横截面扫描电子显微镜(SEM),高分辨率透射电子显微镜(HRTEM),选定区域电子衍射(SAED)和(掠入射)X射线衍射((GI)XRD)测量揭示了这些MoO 2纳米棒在c-蓝宝石衬底上表现出外延生长行为,且MoO 2(100)∥蓝宝石(0001)和MoO 2的取向关系⟨001⟩与蓝宝石⟨101̅0⟩对齐。拉曼光谱/成像,能量色散光谱(EDS)和GIXRD结果公开了这样的MoO 2纳米棒被MoS 2(MoO 2 @MoS 2)包裹。基于个体传送设备的MoO 2个@MoS 2个纳米棒显示~1.65×10的电阻率-4 Ω·cm时,comfirming这种纳米棒具有较高的结晶度。我们的发现将有助于MoO 2 @MoS 2在纳米电子器件领域的应用。
更新日期:2018-01-12
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