Nano-structured metals have been explored as self-healing materials for radiation damage due to vacancy-interstitial recombination at interfaces, such as grain boundaries (GBs) in nanocrystals (NCs) and free surfaces in nanoporous metals (NPs). The annihilation in copper was recently proposed to be via the interstitial-emission (IE) from the GB. However, whether the IE is applied as a possibly universal mechanism in other NPs and NCs deserves further investigation. The interstitial is often considered to overcome a large binding energy with the GB/surface to migrate out of the GB/surface and induce annihilation. In this work, with emphasis on the IE in tungsten where the interstitial is exceptionally tightly bound to the tungsten GB/surface, we found that the interstitial only needed to migrate over a small distance from the GB/surface to recombine with the vacancy nearby at a small energy barrier. During the process, the annihilation region around a static interstitial at the GB/surface propagated or extended greatly to the adjacent bulk area. The annihilation was found to be via the IE from the GB/surface or coupled vacancy hop with the IE. The ratio of the interstitial-GB/surface binding energy to the trapping-radius of the GB/surface for the interstitial was proposed to be a better qualitative indicator for the difficulty in the IE than the binding energy. Given that the IE works in the investigated NPs and NCs tungsten, iron and copper where the interstitials of distinct configurations bind with the GBs/surfaces at diverse levels, the IE mechanism may work universally in various nano-structured metals.

由于界面处的空位-间隙复合，例如纳米晶体（NCs）中的晶界（GBs）和纳米孔金属（NPs）中的自由表面，纳米结构金属已被研究用作辐射修复的自愈材料。最近有人建议通过GB的间隙发射（IE）消灭铜。但是，IE是否可以作为其他NP和NC中可能的通用机制应用，值得进一步研究。通常认为填隙能克服与GB /表面的较大结合能，从而迁移出GB /表面并引起an灭。在这项工作中，重点是钨的IE，其中间隙特别紧密地结合到钨的GB /表面上，我们发现，插页式广告只需要从GB /表面迁移一小段距离，即可与附近的空位以较小的能垒重新结合。在此过程中，GB /表面上静态间隙周围的the灭区域大量传播或扩展到相邻的块状区域。发现GB灭是通过GB /表面的IE进行的，或者是与IE耦合的空位跃点。间隙中GB /表面结合能与间隙中GB /表面的俘获半径之比被认为是比结合能更好的定性指标。鉴于IE在研究的NPs和NCs中使用的是钨，铁和铜，其中不同构型的间隙与GBs /表面以不同的水平结合在一起，