Negative differential resistance and hysteresis in graphene-based organic light-emitting devices†,Journal of Materials Chemistry C

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Negative differential resistance and hysteresis in graphene-based organic light-emitting devices†
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2018-01-01 00:00:00 , DOI: 10.1039/c7tc05148d
Qin Zhang _{1,

2,

3,

4,

5} , Shufen Chen _{1,

2,

3,

4,

5} , Shuai Zhang _{1,

2,

3,

4,

5} , Wenjuan Shang _{1,

2,

3,

4,

5} , Lihui Liu _{1,

2,

3,

4,

5} , Minghao Wang _{1,

2,

3,

4,

5} , Hongtao Yu _{1,

2,

3,

4,

5} , Lingling Deng _{1,

2,

3,

4,

5} , Guangqin Qi _{1,

2,

3,

4,

5} , Laiyuan Wang _{1,

2,

3,

4,

5} , Sanyang Han _{1,

2,

3,

4,

5} , Bo Hu _{1,

2,

3,

4,

5} , Qi Kang _{1,

2,

3,

4,

5} , Yuejiao Liu _{1,

2,

3,

4,

5} , Mingdong Yi _{1,

2,

3,

4,

5} , Yanwen Ma _{1,

2,

3,

4,

5} , Wenjing Yang _{1,

2,

3,

4,

5} , Jing Feng _{6,

7,

8,

9,

10} , Xiaogang Liu _{11,

12,

13,

14,

15} , Hongbo Sun _{6,

7,

8,

9,

10} , Wei Huang _{1,

2,

3,

4,

5}

Affiliation

Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors
Institute of Advanced Materials (IAM)
Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM)
Nanjing University of Posts & Telecommunications (NUPT)
Nanjing 210023
State Key Laboratory on Integrated Optoelectronics
College of Electronic Science and Engineering
Jilin University
Changchun 130012
China
Department of Chemistry
National University of Singapore
Singapore 117543
Singapore
Centre for Functional Materials

Here, we report the experimental observation of negative differential resistance (NDR) and hysteresis phenomena in graphene-based OLEDs and their effects on device performance. Our results reveal that the NDR and hysteresis mainly originate from the poly(methyl methacrylate) residue resting on graphene. We further demonstrate that current annealing is a facile and effective technique to remove the polymeric residue and eliminate the NDR, leading to the dramatically enhanced luminous efficiency from 30.9 to 41.6 cd A⁻¹, and to 89.2 cd A⁻¹ when equipped with a high index half-ball lens. The demonstrated pretreatment process of graphene establishes a new path for the construction of a wide variety of high performance optoelectronic devices.

中文翻译：

石墨烯基有机发光器件的负微分电阻和磁滞†

在这里，我们报告了基于石墨烯的OLED的负差分电阻（NDR）和磁滞现象的实验观察，以及它们对器件性能的影响。我们的结果表明，NDR和滞后现象主要源自石墨烯上的聚（甲基丙烯酸甲酯）残基。我们进一步证明，当前的退火技术是一种去除聚合物残留物和消除NDR的简便有效的技术，从而使发光效率从30.9 cd A ^-1显着提高到41.6 cd A ^-1，而配备了高功率的A则达到89.2 cd A ^-1索引半球镜。已证明的石墨烯预处理工艺为构建各种高性能光电器件建立了一条新途径。

更新日期：2018-01-01

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