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Chemical Vapor Deposition of Azidoalkylsilane Monolayer Films
Langmuir ( IF 3.7 ) Pub Date : 2018-01-09 00:00:00 , DOI: 10.1021/acs.langmuir.7b04011 Rita Vos 1 , Cedric Rolin 1 , Jens Rip 1 , Thierry Conard 1 , Tim Steylaerts 1 , Maria Vidal Cabanilles 1 , Karen Levrie 1, 2 , Karolien Jans 1 , Tim Stakenborg 1
Langmuir ( IF 3.7 ) Pub Date : 2018-01-09 00:00:00 , DOI: 10.1021/acs.langmuir.7b04011 Rita Vos 1 , Cedric Rolin 1 , Jens Rip 1 , Thierry Conard 1 , Tim Steylaerts 1 , Maria Vidal Cabanilles 1 , Karen Levrie 1, 2 , Karolien Jans 1 , Tim Stakenborg 1
Affiliation
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N3-functionalized monolayers on silicon wafer substrates are prepared via the controlled vapor-phase deposition of 11-azidoundecyltrimethoxysilanes at reduced pressure and elevated temperature. The quality of the layer is assessed using contact angle, attenuated total reflectance Fourier transform infrared spectroscopy (ATR–FTIR), and ellipsometry measurements. At 60 °C, longer deposition times are needed to achieve monolayers with similar N3 density compared to depositions at 145 °C. The monolayers formed via the vapor phase are denser compared to those formed via a solvent-based deposition process. ATR–FTIR measurements confirm the incorporation of azido-alkyl chains in the monolayer and the formation of siloxane bridges with the underlying oxide at both deposition temperatures. X-ray photon spectroscopy shows that the N3 group is oriented upward in the grafted layer. Finally, the density was determined using total reflection X-ray fluorescence after a click reaction with chlorohexyne and amounts to 2.5 × 1014 N3 groups/cm2. In summary, our results demonstrate the formation of a uniform and reproducible N3-containing monolayer on silicon wafers, hereby providing a functional coating that enables click reactions at the substrate.
中文翻译：
叠氮基烷基硅烷单层膜的化学气相沉积
硅晶片衬底上的N 3-官能化单层是通过在减压和高温下控制11-叠氮基十一烷基三甲氧基硅烷的气相沉积而制备的。使用接触角，衰减的全反射傅立叶变换红外光谱（ATR–FTIR）和椭偏测量来评估层的质量。在60°C下，需要更长的沉积时间才能获得具有相似N 3的单层膜密度与145°C下的沉积相比。与通过溶剂基沉积工艺形成的单层相比，通过气相形成的单层更致密。ATR–FTIR测量结果证实了在两个沉积温度下叠氮基烷基链均已并入单层，并与下层氧化物形成了硅氧烷桥。X射线光子光谱法表明，N 3基团在接枝层中向上取向。最后，在与氯己炔的点击反应之后，使用全反射X射线荧光测定密度，其密度为2.5×10 14 N 3基/ cm 2。总之，我们的结果表明形成了均匀且可重现的N 3包含在硅晶片上的单层膜，从而提供一种功能性涂层，使基板上的点击反应成为可能。
更新日期：2018-01-09
中文翻译：
叠氮基烷基硅烷单层膜的化学气相沉积
硅晶片衬底上的N 3-官能化单层是通过在减压和高温下控制11-叠氮基十一烷基三甲氧基硅烷的气相沉积而制备的。使用接触角，衰减的全反射傅立叶变换红外光谱（ATR–FTIR）和椭偏测量来评估层的质量。在60°C下，需要更长的沉积时间才能获得具有相似N 3的单层膜密度与145°C下的沉积相比。与通过溶剂基沉积工艺形成的单层相比，通过气相形成的单层更致密。ATR–FTIR测量结果证实了在两个沉积温度下叠氮基烷基链均已并入单层，并与下层氧化物形成了硅氧烷桥。X射线光子光谱法表明，N 3基团在接枝层中向上取向。最后，在与氯己炔的点击反应之后，使用全反射X射线荧光测定密度，其密度为2.5×10 14 N 3基/ cm 2。总之，我们的结果表明形成了均匀且可重现的N 3包含在硅晶片上的单层膜，从而提供一种功能性涂层，使基板上的点击反应成为可能。
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