In order to get a physical insight into the pentacene interlayer-modulated resistive switching (R_S) characteristics, the Au/pentacene/poly(methyl methacrylate) (PMMA)/heavily doped p-type Si (p⁺-Si)/In and Au/PMMA/p⁺-Si/In devices are fabricated and the device performance is provided. The Au/pentacene/PMMA/p⁺-Si/In device shows R_S behavior, whereas the Au/PMMA/p⁺-Si/In device exhibits the set/reset–free hysteresis current–voltage characteristics. The insertion of a pentacene layer is a noticeable contribution to the R_S characteristic. This is because of the occurrence of carrier accumulation/depletion in the pentacene interlayer. The transition from carrier depletion to carrier accumulation (carrier accumulation to carrier depletion) in pentacene occurring under negative (positive) voltage induces the process of set (reset). The switching conduction mechanism is primarily described as space charge limited conduction according to the electrical transport properties measurement. The concept of a double pentacene/PMMA heterostructure opens a promising direction for organic memory devices.

为了深入了解并五苯层间调制的电阻开关（_RS）特性，Au /并五苯/聚（甲基丙烯酸甲酯）（PMMA）/重掺杂p型Si（p ⁺ -Si）/ In和制作了Au / PMMA / p ⁺ -Si / In器件，并提供了器件性能。Au /并五苯/ PMMA / p ⁺ -Si / In器件表现出R _S行为，而Au / PMMA / p ⁺ -Si / In器件表现出无置位/复位的磁滞电流-电压特性。并五苯层的插入是对R _S的显着贡献特征。这是因为在并五苯中间层中发生了载流子累积/耗尽。在并五苯在负（正）电压下发生的从载流子耗尽到载流子累积（载流子累积到载流子耗尽）的转变引发了凝固（复位）过程。根据电传输性质测量，开关传导机制主要描述为空间电荷受限传导。双并五苯/ PMMA异质结构的概念为有机存储设备打开了一个有希望的方向。