We have performed proton irradiation of W and W-5wt.%Ta materials at 350 °C with a step-wise damage level increase up to 0.7 dpa and using two beam energies, namely 40 keV and 3 MeV, in order to probe the accumulation of radiation-induced lattice damage in these materials. Interstitial-type a/2 <111> dislocation loops are formed under irradiation, and their size increases in W-5Ta up to a loop width of 21 ± 4 nm at 0.3 dpa, where loop saturation takes place. In contrast, the loop length in W increases progressively up to 183 ± 50 nm at 0.7 dpa, whereas the loop width remains relatively constant at 29 ± 7 nm at >0.3 dpa, giving rise to dislocation strings. The dislocation loops and tangles are observed in both materials examined after a 3 MeV proton irradiation at 350 °C. Ta doping delays the evolution of radiation-induced dislocation structures in W, and can consequently impact the hydrogen isotope retention under plasma exposure.

我们在350°C下对W和W-5wt。％Ta材料进行了质子辐照，逐步将损伤水平提高到0.7 dpa，并使用两个电子束能量，即40 keV和3 MeV，以探测累积量这些材料中辐射引起的晶格损伤的原因。插页式A/ 2 <111>位错环在辐照下形成，在W-5Ta中，其尺寸增大，在0.3 dpa时环宽达到21±4 nm，并发生环饱和。相反，W中的回路长度在0.7 dpa时逐渐增加到183±50 nm，而在> 0.3 dpa时，回路宽度在29±7 nm处保持相对恒定，从而产生位错串。在350 MeC的3 MeV质子辐照下，两种材料均观察到位错环和缠结。Ta掺杂延迟了W中辐射诱导的位错结构的演化，并因此可能影响等离子体暴露下氢同位素的保留。