Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor,Advanced Optical Materials

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Optical Detection and Spatial Modulation of Mid‐Infrared Surface Plasmon Polaritons in a Highly Doped Semiconductor
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2017-12-28 , DOI: 10.1002/adom.201700492
Davide Maria Di Paola ₁ , Anton V. Velichko ₁ , Mario Bomers ₂ , Nilanthy Balakrishnan ₁ , Oleg Makarovsky ₁ , Mario Capizzi ₃ , Laurent Cerutti ₂ , Alexei N. Baranov ₂ , Manoj Kesaria ₄ , Anthony Krier ₄ , Thierry Taliercio ₂ , Amalia Patanè ₁

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Highly doped semiconductors (HDSCs) are promising candidates for plasmonic applications in the mid‐infrared (MIR) spectral range. This work examines a recent addition to the HDSC family, the dilute nitride alloy In(AsN). Postgrowth hydrogenation of In(AsN) creates a highly conducting channel near the surface and a surface plasmon polariton detected by attenuated total reflection techniques. The suppression of plasmonic effects following a photoannealing of the semiconductor is attributed to the dissociation of the NH bond. This offers new routes for direct patterning of MIR plasmonic structures by laser writing.

中文翻译：

高掺杂半导体中中红外表面等离激元极化子的光学检测和空间调制

高掺杂半导体（HDSC）是中红外（MIR）光谱范围内等离子应用的有前途的候选者。这项工作研究了HDSC系列的最新成员，即稀氮化物合金In（AsN）。In（AsN）的生长后氢化在表面附近创建了一个高传导通道，并通过衰减全反射技术检测到了表面等离子体激元极化。的以下的半导体的photoannealing等离子体效应抑制归因于所述N个的解离 H键。这提供了通过激光写入直接图案化MIR等离子体结构的新途径。

更新日期：2017-12-28

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