Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices,Journal of Materials Chemistry C

当前位置： X-MOL 学术 › J. Mater. Chem. C › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Solution-processable, niobium-doped titanium oxide nanorods for application in low-voltage, large-area electronic devices
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2017-12-28 00:00:00 , DOI: 10.1039/c7tc04197g
F. A. Alharthi _{1,

2,

3,

4,

5} , F. Cheng _{1,

2,

3,

4} , E. Verrelli _{1,

3,

4,

6,

7} , N. T. Kemp _{1,

3,

4,

6,

7} , A. F. Lee _{4,

5,

8,

9} , M. A. Isaacs _{4,

10,

11,

12} , M. O’Neill _{1,

3,

4,

6,

7} , S. M. Kelly _{1,

2,

3,

4}

Affiliation

We report for the first time the one-step synthesis of solution-processable, highly crystalline, niobium-doped titanium dioxide (Nb-TiO₂) nanorods in the anatase phase by the hydrolytic condensation of Ti(OⁱPr)₄ and niobium(V) ethoxide using oleic acid as a structure-directing and stabilising agent. These novel surface-stabilised nanorods can be easily dispersed in common solvents at relatively high concentration (∼10%) and deposited as uniform, thin and transparent films on planar substrates for the fabrication of electronic devices. The small size of the nanoparticles synthesized represents an important advance in achieving high-k dielectric thin films smooth enough to be suitable for OFET applications and the plastic electronics filed in general. Preliminary investigations show that the dielectric constant, k, of niobium-doped (7.1 wt%) titanium dioxide (Nb-TiO₂) nanorods at frequencies in the region of 100 kHz–1 MHz, are more a third greater (k > 8) than that (k = 6) determined for the corresponding undoped titanium dioxide (TiO₂) nanorods. The current–voltage (J–V) behaviour of these devices reveal that niobium-doping improves, by reducing, the leakage current of these devices, thereby preventing hard dielectric breakdown of devices incorporating these new nanorods.

中文翻译：

可溶液处理，掺铌的氧化钛纳米棒，用于低压大面积电子设备

我们首次报告了通过Ti（O ⁱ Pr）₄和铌（的水解缩合）在锐钛矿相中一步法合成溶液可加工的，高度结晶的，掺杂铌的二氧化钛（Nb-TiO ₂）纳米棒。V）使用油酸作为结构导向和稳定剂的乙醇盐。这些新颖的表面稳定的纳米棒可以很容易地以相对较高的浓度（约10％）分散在普通溶剂中，并以均匀，薄而透明的膜形式沉积在平面基板上，用于制造电子设备。合成的小尺寸纳米颗粒代表了获得高k值的重要进展足够光滑的介电薄膜适合于OFET应用和一般的塑料电子产品。初步调查表明，介电常数，ķ，铌-掺杂（7.1重量％）二氧化钛（铌的TiO ₂）在100千赫-1兆赫的区域中的频率纳米棒，更三分之一更大（ķ > 8）比相应的未掺杂的二氧化钛（TiO ₂）纳米棒所确定的值（k = 6）大。这些器件的电流-电压（J – V）行为表明，通过减少这些器件的泄漏电流，铌掺杂得以改善，从而防止了掺入这些新纳米棒的器件的硬介电击穿。

更新日期：2017-12-28

点击分享查看原文

点击收藏

公开下载

阅读更多本刊最新论文本刊介绍/投稿指南11