Thin films of the organic semiconductor meso‐diphenyl tetrathia[22]annulene[2,1,2,1] (DPTTA) are prepared for the first time employing solution‐based techniques to fabricate organic field‐effect transistors (OFETs). Homogeneous and crystalline films of this semiconductor are achieved, thanks to the synergic approach of employing blends of this material with polystyrene (PS) and the high throughput technique bar‐assisted meniscus shearing (BAMS) with a hydrophobic bar. The resulting active layers exhibit state‐of‐the‐art OFET performance with an average mobility of 1 cm² V⁻¹ s⁻¹, threshold voltage close to 0 V, high on/off ratio, and sharp switch on. Furthermore, a DPTTA:PS formulation is optimized to prepare films suitable for their integration in electrolyte‐gated field effect transistors operating in ultrapure water and 0.5 m NaCl aqueous solution. Such devices also reveal excellent performance with mobility values above 0.1 cm² V⁻¹ s⁻¹, potentiometric sensitivity ≈200 µV, time response ≈9 ms, and long term stability in ultrapure water. Hence, this work supports the strategy of combining organic semiconductor:polymer blends with BAMS as a powerful route for achieving high performing devices, and also points out DPTTA as a highly promising material to be integrated in organic electronic devices.

中文翻译：

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固溶和水介电的高性能有机场效应晶体管，基于溶液剪切的硫桥环戊烯衍生物

首次采用基于溶液的技术制备有机半导体内-二苯基四噻吩[22]环戊二烯[2,1,2,1]（DPTTA）薄膜，以制造有机场效应晶体管（OFET）。得益于采用这种材料与聚苯乙烯（PS）共混物的协同方法，以及采用高通量技术和疏水棒的棒助半月板剪切（BAMS）的协同方法，可以实现该半导体的均质和结晶膜。最终的有源层表现出最先进的OFET性能，平均迁移率为1 cm ² V ^-1 s ^-1，阈值电压接近0 V，高开/关比和陡峭的导通。此外，对DPTTA：PS配方进行了优化，以制备适合在超纯水和0.5 m NaCl水溶液中运行的电解质门控场效应晶体管中集成膜的薄膜。此类器件还具有出色的性能，其迁移率值超过0.1 cm ² V ^-1 s ^-1，电位灵敏度≈200µV，时间响应≈9ms，并且在超纯水中具有长期稳定性。因此，这项工作支持将有机半导体：聚合物共混物与BAMS结合起来作为实现高性能器件的有力途径的战略，并且还指出DPTTA是一种非常有前途的材料，可以集成到有机电子器件中。