Abstract In this study, the power ratio between the top and side heaters and the moving velocity of the side insulation are designed to control the shape of the crystal-melt interface during the growth process of a 1600 kg multi-crystalline silicon ingot. The power ratio and insulation gap are adjusted to ensure solidification of the melt. To ensure that the crystal-melt interface is slightly convex in relation to the melt during the entire solidification process, the power ratio should be augmented gradually in the initial stages while being held to a constant value in the middle stages. Initially the gap between the side and the bottom insulation is kept small to reduce thermal stress inside the seed crystals. However, the growth rate will be slow in the early stages of the solidification process. Therefore, the movement of the side insulation is fast in the initial stages but slower in the middle stages. In the later stages, the side insulation gap is fixed. With these modifications, the convexity of the crystal-melt interface in relation to the melt can be maintained during the growth process with an approximately 41% reduction in the thermal stress inside the growing ingot and an 80% reduction in dislocation density along the center line of the ingot compared with the original case.

中文翻译：

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1600kg硅原料定向凝固过程传热优化

摘要 在本研究中，设计了顶部和侧面加热器之间的功率比和侧面绝缘体的移动速度，以控制 1600 kg 多晶硅锭生长过程中晶体-熔体界面的形状。调整功率比和绝缘间隙，确保熔体凝固。为确保在整个凝固过程中晶体-熔体界面相对于熔体略微凸出，在初始阶段应逐渐增加功率比，而在中间阶段保持恒定值。最初，侧面和底部绝缘层之间的间隙很小，以减少籽晶内部的热应力。但是，在凝固过程的早期阶段，增长速度会很慢。所以，侧绝缘的运动在初始阶段很快，但在中间阶段较慢。在后期阶段，侧绝缘间隙是固定的。通过这些修改，晶体-熔体界面相对于熔体的凸度可以在生长过程中保持，生长锭内部的热应力降低约 41%，沿中心线的位错密度降低 80%锭与原始情况相比。