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Giant Two‐Photon Absorption in Mixed Halide Perovskite CH3NH3Pb0.75Sn0.25I3 Thin Films and Application to Photodetection at Optical Communication Wavelengths
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2017-12-27 , DOI: 10.1002/adom.201700819 Ying Xie 1 , Jiandong Fan 2 , Chong Liu 2 , Shumeng Chi 1 , Zeyan Wang 1 , Haohai Yu 1 , Huaijin Zhang 1 , Yaohua Mai 2 , Jiyang Wang 1
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2017-12-27 , DOI: 10.1002/adom.201700819 Ying Xie 1 , Jiandong Fan 2 , Chong Liu 2 , Shumeng Chi 1 , Zeyan Wang 1 , Haohai Yu 1 , Huaijin Zhang 1 , Yaohua Mai 2 , Jiyang Wang 1
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Photodetection in the optical communication wavelength band (OCWB) is a key technique for data processing communications. Photodetectors with integrability, ease of fabrication, low cost, and excellent detection properties are favorable for practical applications. Metal halide perovskite thin films have exhibited intriguing optoelectronic properties. However, their relatively wide intrinsic band gaps indicate that direct photodetection in the infrared OCWB seems impossible. Here, for the first time, direct infrared photodetection covering the OCWB with a metal halide perovskite is demonstrated. Associated with an Sn‐component dependent band gap, a CH3NH3Pb0.75Sn0.25I3 perovskite thin film is fabricated, whose nonlinear two‐photon absorption can expand the optical response up to 1.8 µm. Two‐photon absorption is studied and a very large absorption coefficient of 1.15 cm kW−1 is measured, a value that is respectively 5 and 106 times larger than that of CH3NH3PbI3 thin films and halide perovskite bulk crystals. Based on this favorable performance, direct photodetection at 1535 nm in the C‐band of the OCWB and at 1064 nm is characterized. The realization of direct infrared photodetection in a metal halide perovskite provides a possible alternative in advanced integrated optoelectronics and electronics.
中文翻译：
混合卤化物钙钛矿CH3NH3Pb0.75Sn0.25I3薄膜中的巨大双光子吸收及其在光通信波长下的光检测中的应用
光通信波长带（OCWB）中的光电检测是数据处理通信的关键技术。具有可集成性，易于制造，低成本和优异的检测性能的光电检测器对于实际应用是有利的。金属卤化物钙钛矿薄膜已展现出令人着迷的光电性能。但是，它们的固有带隙相对较宽，这表明在红外OCWB中直接进行光检测似乎是不可能的。在这里，首次展示了用金属卤化物钙钛矿覆盖OCWB的直接红外光检测。与依赖Sn的能带隙相关联的CH 3 NH 3 Pb 0.75 Sn 0.25 I 3制备了钙钛矿薄膜，其非线性双光子吸收可将光学响应扩展到1.8 µm。研究了双光子吸收，并测量了1.15 cm kW -1的非常大的吸收系数，该值分别是CH 3 NH 3 PbI 3薄膜和卤化钙钛矿块状晶体的吸收系数的5倍和10 6倍。基于这种良好的性能，对在OCWB的C波段中1535 nm和1064 nm处的直接光电检测进行了表征。金属卤化物钙钛矿中直接红外光电检测的实现为先进的集成光电和电子学提供了一种可能的替代方法。
更新日期：2017-12-27
中文翻译：
混合卤化物钙钛矿CH3NH3Pb0.75Sn0.25I3薄膜中的巨大双光子吸收及其在光通信波长下的光检测中的应用
光通信波长带（OCWB）中的光电检测是数据处理通信的关键技术。具有可集成性，易于制造，低成本和优异的检测性能的光电检测器对于实际应用是有利的。金属卤化物钙钛矿薄膜已展现出令人着迷的光电性能。但是，它们的固有带隙相对较宽，这表明在红外OCWB中直接进行光检测似乎是不可能的。在这里，首次展示了用金属卤化物钙钛矿覆盖OCWB的直接红外光检测。与依赖Sn的能带隙相关联的CH 3 NH 3 Pb 0.75 Sn 0.25 I 3制备了钙钛矿薄膜，其非线性双光子吸收可将光学响应扩展到1.8 µm。研究了双光子吸收，并测量了1.15 cm kW -1的非常大的吸收系数，该值分别是CH 3 NH 3 PbI 3薄膜和卤化钙钛矿块状晶体的吸收系数的5倍和10 6倍。基于这种良好的性能，对在OCWB的C波段中1535 nm和1064 nm处的直接光电检测进行了表征。金属卤化物钙钛矿中直接红外光电检测的实现为先进的集成光电和电子学提供了一种可能的替代方法。
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