Silicon‐based photoconductors, with their low cost, high sensitivity, and complementary metal–oxide–semiconductor (CMOS) compatibility, have great potential for high‐resolution imaging, light‐activated switching, and single‐photon counting. However, they usually suffer from a large dark leakage current and a long response time, which greatly limits their applications. Here, a high‐performance bulk silicon photodetector is fabricated working at room temperature with a broad spectral response range from 300 to 1200 nm through silver (Ag) hyperdoping. The detector shows a low dark current of 3.8 × 10⁻⁷ A cm⁻² and a high external quantum efficiency of 266.0% for 800 nm at −1 V reverse bias, indicating a photoconductive gain. Moreover, the Si:Ag photodetector has a very low noise and a high detectivity (≈1.84 × 10¹² Jones at −1 V), and meanwhile exhibits a rapid response speed with the rise time of 12.5 µs and fall time of 15.9 µs. By combining with the deep level transient spectrum measurements, it is believed that the operating mechanism of the detector is based on the electron traps with an average energy level of E_c– 0.28 eV induced by the Ag hyperdoping. These results are of significance for the fabrication of silicon‐based photodetectors with high performances.

中文翻译：

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Ag超掺杂具有高光电导增益，低噪声和快速响应的陷阱辅助体硅光电探测器

硅基光电导体具有低成本，高灵敏度和互补的金属氧化物半导体（CMOS）兼容性，在高分辨率成像，光激活开关和单光子计数方面具有巨大潜力。但是，它们通常遭受较大的暗漏电流和较长的响应时间，这极大地限制了它们的应用。在这里，通过银（Ag）超掺杂，制造了一种高性能的块状硅光电探测器，该探测器在室温下工作，具有300至1200 nm的宽光谱响应范围。检测器显示出3.8×10 ^-7 A cm ^-2的低暗电流在-1 V反向偏置下800 nm的外部量子效率高达266.0％，表明具有光电导增益。此外，Si：Ag光电探测器具有极低的噪声和较高的检测率（-1 V时约为1.84×10 ¹² Jones），同时具有快速的响应速度，上升时间为12.5 µs，下降时间为15.9 µs。通过与深能级瞬态光谱测量相结合，可以认为检测器的工作机理是基于由银超掺杂引起的平均能级为E _c – 0.28 eV的电子陷阱。这些结果对于制造高性能的硅基光电探测器具有重要意义。